1;3 Semiconductors Product specification
Thyristors BT151 series C
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT151- 500C 650C 800C
bidirectional blocking voltage V
DRM
, Repetitive peak off-state 500 650 800 V
capability and high thermal cycling V
RRM
voltages
performance. Typical applications I
T(AV)
Average on-state current 7.5 7.5 7.5 A
include motor control, industrial I
T(RMS)
RMS on-state current 12 12 12 A
and domestic lighting, heating and I
TSM
Non-repetitive peak on-state 100 100 100 A
static switching. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 60134).
SYMBO PARAMETER CONDITIONS MIN. MAX. UNIT
L
-500C -650C -800C
V
DRM
, Repetitive peak - 500
1
650
1
800 V
V
RRM
off-state voltages
I
T(AV)
Average on-state half sine wave; T
mb
≤ 109 ˚C - 7.5 A
current
I
T(RMS)
RMS on-state current all conduction angles - 12 A
I
TSM
Non-repetitive peak half sine wave; T
j
= 25 ˚C
on-state current prior to surge
t = 10 ms - 100 A
t = 8.3 ms - 110 A
I
2
tI
2
t for fusing t = 10 ms - 50 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 20 A; I
G
= 50 mA; - 50 A/μs
on-state current after dI
G
/dt = 50 mA/μs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate - 5 V
voltage
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
ak
g
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
April 2004 1 Rev 1.000
