FDMS8672AS N-Channel PowerTrench
®
SyncFET
TM
www.fairchildsemi.com
2
©2009 Fairchild Semiconductor Corporation
FDMS8672AS Rev.B
3
Electrical Characteristics T
J
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage I
D
= 1mA, V
GS
= 0V 30 V
'BV
DSS
'T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10mA, referenced to 25°C 27 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24V, V
GS
= 0V 500 PA
I
GSS
Gate to Source Leakage Current V
GS
= ±20V, V
DS
= 0V ±100 nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 1mA 1.0 1.9 3.0 V
'V
GS(th)
'T
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 10mA, referenced to 25°C -5 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10V, I
D
= 18A 4.0 5.0
m:V
GS
= 4.5V, I
D
= 15A 5.4 7.0
V
GS
= 10V, I
D
= 18A, T
J
= 125°C 5.6 7.6
g
FS
Forward Transconductance V
DD
= 10V, I
D
= 18A 85 S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
1955 2600 pF
C
oss
Output Capacitance 1040 1385 pF
C
rss
Reverse Transfer Capacitance 125 190 pF
R
g
Gate Resistance f = 1MHz 0.8 :
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 15V, I
D
= 18A,
V
GS
= 10V, R
GEN
= 6:
12 22 ns
t
r
Rise Time 410ns
t
d(off)
Turn-Off Delay Time 27 44 ns
t
f
Fall Time 310ns
Q
g
Total Gate Charge V
GS
= 0V to 10V
V
DD
= 15V,
I
D
= 18A
28 40 nC
Q
g
Total Gate Charge V
GS
= 0V to 4.5V 15 21 nC
Q
gs
Gate to Source Charge 5.6 nC
Q
gd
Gate to Drain “Miller” Charge 3.4 nC
Drain-Source Diode Characteristics
V
SD
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
=2A (Note 3) 0.4 0.7 V
t
rr
Reverse Recovery Time
I
F
= 18A, di/dt = 300A/Ps
32 52 ns
Q
rr
Reverse Recovery Charge 36 58 nC
NOTES:
1. R
TJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJC
is guaranteed by design while R
TCA
is determined by
the user's board design.
2. Starting T
J
= 25, L = 3mH, I
AS
= 13A, V
DD
= 30V, V
GS
= 10V.
3. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
a. 50°C/W when mounted on
a 1 in
2
pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.