BAV200, BAV201, BAV202, BAV203
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 31-Jul-12
1
Document Number: 85544
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, High Voltage
MECHANICAL DATA
Case: QuadroMELF SOD-80
Weight: approx. 34 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon epitaxial planar diodes
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• General purposes
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE
TYPE
MARKING
INTERNAL
CONSTRUCTION
REMARKS
BAV200 V
RRM
= 60 V BAV200-GS18 or BAV200-GS08 - Single Tape and reel
BAV201 V
RRM
= 120 V BAV201-GS18 or BAV201-GS08 - Single Tape and reel
BAV202 V
RRM
= 200 V BAV202-GS18 or BAV202-GS08 - Single Tape and reel
BAV203 V
RRM
= 250 V BAV203-GS18 or BAV203-GS08 - Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Repetitive peak reverse voltage
BAV200 V
RRM
60 V
BAV201 V
RRM
120 V
BAV202 V
RRM
200 V
BAV203 V
RRM
250 V
Reverse voltage
BAV200 V
R
50 V
BAV201 V
R
100 V
BAV202 V
R
150 V
BAV203 V
R
200 V
Forward continuous current I
F
250 mA
Peak forward surge current t
p
= 1 s, T
j
= 25 °C I
FSM
1A
Repetitive peak forward current f = 50 Hz I
FRM
625 mA
Power dissipation P
tot
500 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
- 65 to + 175 °C
