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2N3906,116

P1-P3P4-P6P7-P7
DATA SHEET
Product specification
Supersedes data of 1999 Apr 23
2004 Oct 11
DISCRETE SEMICONDUCTORS
2N3906
PNP switching transistor
b
ook, halfpage
M3D186
2004 Oct 11 2
Philips Semiconductors Product specification
PNP switching transistor 2N3906
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• High-speed switching in industrial applications.
DESCRIPTION
PNP switching transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N3904.
PINNING
PIN DESCRIPTION
1 collector
2 base
3 emitter
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM280
1
2
3
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
2N3906 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter −−40 V
V
CEO
collector-emitter voltage open base −−40 V
V
EBO
emitter-base voltage open collector −−6V
I
C
collector current (DC) −−200 mA
I
CM
peak collector current −−300 mA
I
BM
peak base current −−100 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 500 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 250 K/W
2004 Oct 11 3
Philips Semiconductors Product specification
PNP switching transistor 2N3906
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
=0 A −−50 nA
I
EBO
emitter-base cut-off current V
EB
= −6 V; I
C
=0 A −−50 nA
h
FE
DC current gain V
CE
= −1 V; note 1; see Fig.2
I
C
= −0.1 mA 60 −
I
C
= −1mA 80 −
I
C
= −10 mA 100 300
I
C
= −50 mA 60 −
I
C
= −100 mA 30 −
V
CEsat
collector-emitter saturation
voltage
I
C
= −10 mA; I
B
= −1 mA; note 1 −−200 mV
I
C
= −50 mA; I
B
= −5 mA; note 1 −−200 mV
V
BEsat
base-emitter saturation voltage I
C
= −10 mA; I
B
= −1 mA; note 1 −−850 mV
I
C
= −50 mA; I
B
= −5 mA; note 1 −−950 mV
C
c
collector capacitance V
CB
= −5 V; I
E
=i
e
= 0 A; f = 1 MHz − 4.5 pF
C
e
emitter capacitance I
C
=i
c
= 0; V
EB
= −500 mV; f = 1 MHz − 10 pF
f
T
transition frequency V
CE
= −20 V; I
C
= −10 mA; f = 100 MHz 250 − MHz
F noise figure V
CE
= −5 V; I
C
= −100 µA; R
S
=1kΩ;
f = 10 Hz to 15.7 kHz
− 4dB
Switching times (between 10 % and 90 % levels); see Fig.3
t
on
turn-on time I
Con
= −10 mA; I
Bon
= −1 mA;
I
Boff
=1mA
− 65 ns
t
d
delay time − 35 ns
t
r
rise time − 35 ns
t
off
turn-off time − 300 ns
t
s
storage time − 225 ns
t
f
fall time − 75 ns
P1-P3P4-P6P7-P7

2N3906,116

Mfr. #:
Buy 2N3906,116
Manufacturer:
NXP Semiconductors
Description:
TRANS PNP 40V 0.2A TO92
Lifecycle:
New from this manufacturer.
Delivery:
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