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MPSW42G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 7
1 Publication Order Number:
MPSW42/D
MPSW42
One Watt High Voltage
Transistor
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
300 Vdc
Collector−Base Voltage V
CBO
300 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
1.0
8.0
W
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
2.5
20
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MPSW42RLRA TO−92 2000/Tape & Reel
MPSW42RLRAG TO−92
(Pb−Free)
2000/Tape & Reel
Device Package Shipping
†
MPSW42 TO−92 5000 Units/Box
MPSW42G TO−92
(Pb−Free)
5000 Units/Box
MPSW42 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
COLLECTOR
3
2
BASE
1
EMITTER
MARKING DIAGRAM
MPS
W42
AYWW G
G
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92 1 WATT
(TO−226)
CASE 29−10
STYLE 1
MPSW42
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
300 − Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
300 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 100 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − Vdc
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
I
CBO
− 0.1
mAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
I
EBO
− 0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
h
FE
25
40
40
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
CE(sat)
− 0.5 Vdc
Base−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
BE(sat)
− 0.9 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 20 MHz)
f
T
50 − MHz
Collector Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
− 3.0 pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MPSW42
http://onsemi.com
3
C, CAPACITANCE (pF)
Figure 1. DC Current Gain
V
R
, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10
1000
C
eb
@ 1MHz
Figure 2. Capacitance
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
100
1.0
C
cb
@ 1MHz
V
BE(on)
@ 25°C, V
CE
= 10 V
V
CE(sat)
@ 25°C, I
C
/I
B
= 10
V
BE(sat)
@ 25°C, I
C
/I
B
= 10
V
CE(sat)
@ 125°C, I
C
/I
B
= 10
V
CE(sat)
@ -55°C, I
C
/I
B
= 10
V
BE(sat)
@ 125°C, I
C
/I
B
= 10
V
BE(sat)
@ -55°C, I
C
/I
B
= 10
V
BE(on)
@ 125°C, V
CE
= 10 V
V
BE(on)
@ -55°C, V
CE
= 10 V
Figure 3. ”ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
120
0.1 1.0
10
100
80
60
0
h
FE
, DC CURRENT GAIN
T
J
= +125°C
25°C
-55°C
V
CE
= 10 Vdc
100
20
40
P1-P3P4-P4

MPSW42G

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Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 300V 1W NPN
Lifecycle:
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