IRLR024NTRPBF

P1-P3 P4-P6 P7-P9 P10-P11

IRLR/U024NPbF

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

200

400

600

800

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

3

6

9

12

15

0 4 8 12 16 20

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 13

V = 44V

V = 28V

I = 11A

DS

DS

D

1

10

100

0.4 0.8 1.2 1.6 2.0

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

1

10

100

1000

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10µs

100µs

1ms

10ms

A

T = 25°C

T = 175°C

Single Pulse

C

J

IRLR/U024NPbF

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Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

5V

+

-

V

DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

t , Rectangular Pulse Duration (sec)

1

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE

(THERMAL RESPONSE)

A

Thermal Response (Z )

P

t

2

1

t

DM

Notes: 

1. Duty factor D = t / t

2. Peak T = P x Z + T 

12

J

DM

thJC

C 

25 50 75 100 125 150 175

0

5

10

15

20

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

IRLR/U024NPbF

6 www.irf.com

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

0

20

40

60

80

100

120

140

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

V = 25V

I

TOP 4.5A

7.8A

BOTTOM 11A

DD

D

P1-P3 P4-P6 P7-P9 P10-P11

IRLR024NTRPBF

Mfr. #:

Buy IRLR024NTRPBF

Manufacturer:

Infineon Technologies

Description:

MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC

Lifecycle:

New from this manufacturer.

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