TIPL770-S Datasheet TIPL770-S | P1-P3

TIPL770

NPN SILICON POWER TRANSISTOR

1

MARCH 1984 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

Rugged Triple-Diffused Planar Construction

2.5 A Continuous Collector Current

Operating Characteristics Fully Guaranteed

at 100°C

850 Volt Blocking Capability

50 W at 25°C Case Temperature

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTE 1: This value applies for t

p

≤ 10 ms, duty cycle ≤ 2%.

TINUEULAVLOBMYSGNITAR

Collector-base voltage (I

E

= 0) V

CBO

850 V

Collector-emitter voltage (V

BE

V)0 =

CES

850 V

Collector-emitter voltage (I

B

V)0 =

CEO

400 V

Emitter-base voltage V

EBO

10 V

Continuous collector current I

C

2.5 A

I)1 etoN ees( tnerruc rotcelloc kaeP

CM

8 A

Continuous device dissipation at (or below) 25°C Perutarepmet esac

tot

50 W

Tegnar erutarepmet noitcnuj gnitarepO

j

-65 to +150 °C

Storage temperature range T

stg

-65 to +150 °C

B

C

E

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

1

2

3

This series is obsolete and

not recommended for new designs.

OBSOLETE

TIPL770

NPN SILICON POWER TRANSISTOR

2

MARCH 1984 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

Collector-emitter

sustaining voltage

I

C

= 100 mA L = 25 mH (see Note 2) 400 V

I

CES

Collector-emitter

cut-off current

V

CE

= 850 V

V

CE

= 850 V

V

BE

=0

V

BE

=0 T

C

= 100°C

5

200

µA

I

CEO

Collector cut-off

current

V

CE

= 400 V I

B

=0 5 µA

I

EBO

Emitter cut-off

current

V

EB

= 10 V I

C

=0 1 mA

h

FE

Forward current

transfer ratio

V

CE

= 5 V I

C

= 0.5 A (see Notes 3 and 4) 20 60

V

CE(sat)

Collector-emitter

saturation voltage

I

B

= 0.2 A

I

B

= 0.5 A

I

B

= 0.5 A

I

C

= 1A

I

C

= 2.5A

I

C

= 2.5A

(see Notes 3 and 4)

T

C

= 100°C

1.0

2.5

5.0

V

BE(sat)

Base-emitter

saturation voltage

I

B

= 0.2 A

I

B

= 0.5 A

I

B

= 0.5 A

I

C

= 1A

I

C

= 2.5A

I

C

= 2.5 A

(see Notes 3 and 4)

T

C

= 100°C

1.0

1.2

1.3

V

f

t

Current gain

bandwidth product

V

CE

= 10 V I

C

= 0.5 A f = 1 MHz 12 MHz

C

ob

Output capacitance V

CB

= 20 V I

E

=0 f = 0.1 MHz 55 pF

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

θJC

Junction to case thermal resistance 2.5 °C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

†

MIN TYP MAX UNIT

t

sv

Voltage storage time

I

C

= 2.5 A

V

BE(off)

= -5 V

I

B(on)

= 0.5 A (see Figures 1 and 2)

2µs

t

rv

Voltage rise time 200 ns

t

fi

Current fall time 200 ns

t

ti

Current tail time 50 ns

t

xo

Cross over time 300 ns

t

sv

Voltage storage time

I

C

= 2.5 A

V

BE(off)

= -5 V

I

B(on)

= 0.5 A

T

C

= 100°C

(see Figures 1 and 2)

2.5 µs

t

rv

Voltage rise time 400 ns

t

fi

Current fall time 250 ns

t

ti

Current tail time 50 ns

t

xo

Cross over time 500 ns

OBSOLETE

TIPL770

NPN SILICON POWER TRANSISTOR

3

MARCH 1984 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

PARAMETER MEASUREMENT INFORMATION

Figure 1. Inductive-Load Switching Test Circuit

Figure 2. Inductive-Load Switching Waveforms

RB

(on)

V

BE(off)

V

clamp

= 400 V

v

cc

µ

H

180

33

Ω

+5V

D45H11

BY205-400

2N2222

BY205-400

5X BY205-400

BY205-400

1 k

Ω

68

Ω

1 k

Ω

47

Ω

2N2904

D44H11

100

Ω

270

Ω

V Gen

+5V

1 k

Ω

0.02

µ

F

TUT

1 pF

33

Ω

Adjust pw to obtain I

C

For I

C

< 6 A V

CC

= 50 V

For I

C

≥ 6 A V

CC

= 100 V

Base Current

A (90%)

I

B(on)

I

B

Collector Voltage

Collector Current

D (90%)

E (10%)

F (2%)

C

B

90%

10%

V

CE

I

C(on)

A - B = t

sv

B - C = t

rv

D - E = t

fi

E - F = t

ti

B - E = t

xo

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t

r

< 15 ns, R

in

> 10 Ω, C

in

< 11.5 pF.

B. Resistors must be noninductive types.

OBSOLETE

TIPL770-S

TIPL770-S

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