MBR2535CT, MBR2545CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR2535CT
MBR2545CT
V
RRM
V
RWM
V
R
35
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 160°C)
I
F(AV)
30 A
Peak Repetitive Forward Current,
per Diode Leg (Rated V
R
, Square Wave, 20 kHz, T
C
= 150°C)
I
FRM
30 A
Non−Repetitive Peak Surge Current per Diode Leg
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz)
I
RRM
1.0 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/s
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
ESD >400
>8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
JA
.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Thermal Resistance,− Junction−to−Case
− Junction−to−Ambient (Note 2)
R
JC
R
JA
1.5
50
°C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS (Per Diode)
Symbol Characteristic Condition Min Typ Max Unit
V
F
Instantaneous Forward Voltage
(Note 3)
I
F
= 15 Amp, T
J
= 25°C
I
F
= 15 Amp, T
J
= 125°C
I
F
= 30 Amp, T
J
= 25°C
I
F
= 30 Amp, T
J
= 125°C
−
−
−
−
−
0.50
−
0.65
0.62
0.57
0.82
0.72
V
I
R
Instantaneous Reverse Current
(Note 3)
Rated dc Voltage, T
J
= 25°C
Rated dc Voltage, T
J
= 125°C
−
−
−
9.0
0.2
25
mA
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%.
