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2N5457G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 6
1 Publication Order Number:
2N5457/D
2N5457, 2N5458
JFETs - General Purpose
N−Channel − Depletion
N−Channel Junction Field Effect Transistors, depletion mode
(Type A) designed for audio and switching applications.
Features
• N−Channel for Higher Gain
• Drain and Source Interchangeable
• High AC Input Impedance
• High DC Input Resistance
• Low Transfer and Input Capacitance
• Low Cross−Modulation and Intermodulation Distortion
• Plastic Encapsulated Package
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
25 Vdc
Drain−Gate Voltage V
DG
25 Vdc
Reverse Gate −Source Voltage V
GSR
−25 Vdc
Gate Current I
G
10 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
310
2.82
mW
mW/°C
Operating Junction Temperature T
J
135 °C
Storage Temperature Range T
stg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
2N5457 TO−92 1000 Units/Box
2N5458 TO−92 1000 Units/Box
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
2N5458G TO−92
(Pb−Free)
1000 Units/Box
2N5457G TO−92
(Pb−Free)
1000 Units/Box
MARKING
DIAGRAM
TO−92
CASE 29
STYLE 5
2N
545x
AYWWG
G
2N545x = Device Code
x = 7 or 8
A = Assembly Location
Y = Year
WW = Work Week
G =Pb−Free Package
(Note: Microdot may be in either location)
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
2N5457, 2N5458
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I
G
= −10 mAdc, V
DS
= 0)
V
(BR)GSS
−25 − − Vdc
Gate Reverse Current
(V
GS
= −15 Vdc, V
DS
= 0)
(V
GS
= −15 Vdc, V
DS
= 0, T
A
= 100°C)
I
GSS
−
−
−
−
-1.0
−200
nAdc
Gate−Source Cutoff Voltage 2N5457
(V
DS
= 15 Vdc, i
D
= 10 nAdc) 2N5458
V
GS(off)
−0.5
−1.0
−
−
−6.0
−7.0
Vdc
Gate−Source Voltage
(V
DS
= 15 Vdc, i
D
= 100 mAdc) 2N5457
(V
DS
= 15 Vdc, i
D
= 200 mAdc) 2N5458
V
GS
−
−
−2.5
−3.5
−
−
Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (Note 1) 2N5457
(V
DS
= 15 Vdc, V
GS
= 0) 2N5458
I
DSS
1.0
2.0
3.0
6.0
5.0
9.0
mAdc
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance (Note 1) 2N5457
(V
DS
= 15 Vdc, V
GS
= 0, f = 1 kHz) 2N5458
|Y
fs
| 1000
1500
3000
4000
5000
5500
mmhos
Output Admittance Common Source (Note 1)
(V
DS
= 15 Vdc, V
GS
= 0, f = 1 kHz)
|Y
os
|
− 10 50
mmhos
Input Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1 kHz)
C
iss
− 4.5 7.0 pF
Reverse Transfer Capacitance
(V
DS
= 15 Vdc, V
GS
= 0, f = 1 kHz)
C
rss
− 1.5 3.0 pF
1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
2N5457, 2N5458
http://onsemi.com
3
Figure 1. Noise Figure versus Source Resistance
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 2. Typical Drain Characteristics
V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
Figure 3. Common Source Transfer Characteristics
1.0
0.4
0.2
0
-1.2
0.8
0.6
0 5 10 15 20
25
0
0.6
0.4
0.2
0.8
1.2
1.0
-0.8 -0.4 0
1.2
, DRAIN CURRENT (mA)
D
I
, DRAIN CURRENT (mA)
D
I
V
DS
= 15 V
V
GS
= 0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
V
GS(off)
^ -1.2 V
V
GS(off)
^ -1.2 V
R
S
, SOURCE RESISTANCE (Megohms)
14
12
10
8
6
4
2
0
NF, NOISE FIGURE (dB)
0.001 0.01 0.1 1.0
10
V
DS
= 15 V
V
GS
= 0
f = 1 kHz
TYPICAL CHARACTERISTICS
For 2N5457 Only
P1-P3P4-P5

2N5457G

Mfr. #:
Buy 2N5457G
Manufacturer:
ON Semiconductor
Description:
JFET 25V 10mA
Lifecycle:
New from this manufacturer.
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