IRL2505PbF
2 www.irf.com
Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.035 V/°C Reference to 25°C, I
D
= 1mA
0.008 V
GS
= 10V, I
D
= 54A
0.010 Ω V
GS
= 5.0V, I
D
= 54A
0.013 V
GS
= 4.0V, I
D
= 45A
V
GS(th)
Gate Threshold Voltage 1.0 2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 59 S V
DS
= 25V, I
D
= 54A
25 V
DS
= 55V, V
GS
= 0V
250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage -100 V
GS
= -16V
Q
g
Total Gate Charge 130 I
D
= 54A
Q
gs
Gate-to-Source Charge 25 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge 67 V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time 12 V
DD
= 28V
t
r
Rise Time 160 I
D
= 54A
t
d(off)
Turn-Off Delay Time 43 R
G
= 1.3Ω, V
GS
= 5.0V
t
f
Fall Time 84 R
D
= 0.50Ω, See Fig. 10
Between lead,
and center of die contact
C
iss
Input Capacitance 5000 V
GS
= 0V
C
oss
Output Capacitance 1100 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 390 = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance 7.5
ns
I
DSS
Drain-to-Source Leakage Current
µA
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage 1.3 V T
J
= 25°C, I
S
= 54A, V
GS
= 0V
t
rr
Reverse Recovery Time 140 210 ns T
J
= 25°C, I
F
= 54A
Q
rr
Reverse Recovery Charge 650 970 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
S
D
G
A
104
360
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
I
SD
≤ 54A, di/dt ≤ 230A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
V
DD
= 25V, starting T
J
= 25°C, L = 240µH
R
G
= 25Ω, I
AS
= 54A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
GSS
