IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B
R
G
- Ohms
0 102030405060
E
(OFF)
- millijoules
0
2
4
6
8
10
12
E
(ON)
- millijoules
0
1
2
3
4
5
6
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
(K/W)
0.001
0.01
0.1
1
D=0.02
V
CE
- Volts
0 100 200 300 400 500 600
I
C
- Amperes
0.1
1
10
100
Q
g
- nanocoulombs
0 40 80 120 160 200
V
GE
- Volts
0
4
8
12
16
I
C
- Amperes
0 20406080100
E
(OFF)
- milliJoules
0
2
4
6
8
10
12
E
(ON)
- millijoules
0
1
2
3
4
5
6
V
CE
= 250V
I
C
= 25A
E
(ON)
E
(OFF)
E
(ON)
E
(OFF)
T
J
= 125°C
R
G
= 6.2 Ω
dV/dt < 5V/ns
D=0.1
D=0.05
Single pulse
D = Duty Cycle
T
J
= 125°C
600
E
(OFF)
D=0.2
D=0.5
D=0.01
R
G
= 4.7Ω
I
C
=25A
T
J
= 125°C
I
C
= 100A
I
C
= 50A
E
(ON)
E
(ON)
E
(OFF)
Figure 7. Dependence of E
ON
and E
OFF
on I
C
Figure 8. Dependence of E
ON
and E
OFF
on R
G
Figure 9. Gate Charge Figure 10. Turn-off Safe Operating Area
Figure 11. IGBT Transient Thermal Resistance
