NVTFS6H850NTAG

NVTFS6H850N
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
30 4020 60100
100
10K
86420
0
4
9
10
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE ()
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
100
1000
0.4 0.60.3
0.1
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10001010.1
0.1
1
10
1000
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
2
5
6
V
DS
= 40 V
I
D
= 10 A
T
J
= 25°C
V
GS
= 10 V
V
DS
= 64 V
I
D
= 10 A
t
r
t
f
t
d(off)
t
d(on)
0.5 1.0
V
GS
= 0 V
Q
gd
100
1K
Figure 12. Maximum Drain Current vs. Time in
Avalanche
TIME IN AVALANCHE (s)
10
100
I
PEAK
(A)
T
J(initial)
= 25°C
T
J(initial)
= 100°C
0.00001 0.001 0.01
100
50
1
3
7
8
Q
gs
T
J
= 25°CT
J
= 125°C T
J
= −55°C
1
0.7 0.8
0.1
181210
10
0.9
14 168070
1
0.0001
10
1
10
T
C
= 25°C
V
GS
10 V
Single Pulse
R
DS(on)
Limit
Thermal Limit
Package Limit
10 s
10 ms
0.5 ms
1 ms
NVTFS6H850N
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
t, PULSE TIME (sec)
0.010.001 100.0001 0.10.00001 10.000001
0.1
1
10
100
R
JA
(t) (°C/W)
100 1000
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1%
0.01
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NVTFS6H850NTAG 6H850N WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS6H850NWFTAG 850NWF WDFN8
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVTFS6H850N
www.onsemi.com
6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M 1.40 1.50
q 0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994
.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
B
A
0.20
C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A 0.70 0.75
A1 0.00 −−
b 0.23 0.30
c 0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e 0.65 BSC
G 0.30 0.41
K 0.65 0.80
L 0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05
C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75
2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES
MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40
0.009 0.012 0.016
E3
4X
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NVTFS6H850N/D
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NVTFS6H850NTAG

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Manufacturer:
ON Semiconductor
Description:
MOSFET TRENCH 8 80V NFET
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