VS-ST110SPbF Series
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Vishay Semiconductors
Revision: 11-Mar-14
6
Document Number: 94393
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95078
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2)
(3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST110S Series
Rectangular gate pulse
(4)
- Thyristor
2
- Essential part marking
3
- 0 = Converter grade
4
11
10
- S = Compression bonding stud
8
- V = Glass-metal seal (only up to 1200 V)
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- P = Stud base 20UNF threads
7
- 0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
2 = Flag terminals (for cathode and gate terminals)
9
- Critical dV/dt:
None = Ceramic housing (over 1200 V)
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9 10 11
STVS- 11 0 S 16 P 0 V L PbF
1 - Vishay Semiconductors product
- None = Standard production
- PbF = Lead (Pb)-free