4
Absolute Maximum Ratings Thermal Information
Supply Voltage, V
DD,
V
HB
-V
HS
(Notes 3, 4) . . . . . . . . -0.3V to 18V
LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.0V
Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to V
DD
+0.3V
Voltage on HO (Note 4) . . . . . . . . . . . . . . . V
HS
-0.3V to V
HB
+0.3V
Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V
Average Current in V
DD
to HB diode . . . . . . . . . . . . . . . . . . . 100mA
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)
Maximum Recommended Operating Conditions
Supply Voltage, V
DD
. . . . . . . . . . . . . . . . . . . . . . . . +9V to 14.0VDC
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
Voltage on HB . . V
HS
+8V to V
HS
+14.0V and V
DD
-1V to V
DD
+100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
Thermal Resistance (Typical)
JA
(°C/W)
JC
(°C/W)
SOIC (Note 5) . . . . . . . . . . . . . . . . . . . 95 N/A
EPSOIC (Note 6) . . . . . . . . . . . . . . . . . 40 3.0
QFN (Note 6) . . . . . . . . . . . . . . . . . . . . 37 6.5
DFN (Note 6) . . . . . . . . . . . . . . . . . . . . 40 3.0
Max Power Dissipation at 25
o
C in Free Air (SOIC, Note 5) . . . . 1.3W
Max Power Dissipation at 25
o
C in Free Air (EPSOIC, Note 6). . 3.1W
Max Power Dissipation at 25
o
C in Free Air (QFN, Note 6). . . . . 3.3W
Storage Temperature Range . . . . . . . . . . . . . . . . . . . -65°C to 150°C
Junction Temperature Range. . . . . . . . . . . . . . . . . . . -55°C to 150°C
Lead Temperature (Soldering 10s - SOIC Lead Tips Only) . . 300°C
For Recommended soldering conditions see Tech Brief TB389.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.
NOTES:
3. The HIP2101 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this
mode of operation.
4. All voltages referenced to V
SS
unless otherwise specified.
5.
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6.
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
JC,
the
“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO, Unless Otherwise Specified
PARAMETERS SYMBOL TEST CONDITIONS
T
J
= 25°C
T
J
= -40°C TO
125°C
UNITSMIN TYP MAX MIN MAX
SUPPLY CURRENTS
V
DD
Quiescent Current I
DD
LI = HI = 0V - 0.3 0.45 - 0.6 mA
V
DD
Operating Current I
DDO
f = 500kHz - 1.7 3.0 - 3.4 mA
Total HB Quiescent Current I
HB
LI = HI = 0V - 0.1 0.15 - 0.2 mA
Total HB Operating Current I
HBO
f = 500kHz - 1.5 2.5 - 3 mA
HB to V
SS
Current, Quiescent I
HBS
V
HS
= V
HB
= 114V - 0.05 1.5 - 10 A
HB to V
SS
Current, Operating I
HBSO
f = 500kHz - 0.7 - - - mA
INPUT PINS
Low Level Input Voltage Threshold V
IL
0.8 1.65 - 0.8 - V
High Level Input Voltage Threshold V
IH
- 1.65 2.2 - 2.2 V
Input Pulldown Resistance R
I
- 200 - 100 500 k
UNDER VOLTAGE PROTECTION
V
DD
Rising Threshold V
DDR
7 7.3 7.8 6.5 8 V
V
DD
Threshold Hysteresis V
DDH
-0.5---V
HB Rising Threshold V
HBR
6.5 6.9 7.5 6 8 V
HB Threshold Hysteresis V
HBH
-0.4---V
HIP2101
