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PEMB17,115

P1-P3P4-P6P7-P9P10-P12
PEMB17_PUMB17_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 1 September 2009 3 of 11
NXP Semiconductors
PEMB17; PUMB17
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
5. Limiting values
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - −50 V
V
CEO
collector-emitter voltage open base - −50 V
V
EBO
emitter-base voltage open collector - −10 V
V
I
input voltage
positive - +10 V
negative - −40 V
I
O
output current (DC) - −100 mA
I
CM
peak collector current - −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
- 200 mW
SOT666
[1] [2]
- 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
SOT363
[1]
- 300 mW
SOT666
[1] [2]
- 300 mW
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
T
amb
≤ 25 °C
SOT363
[1]
- - 625 K/W
SOT666
[1] [2]
- - 625 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
T
amb
≤ 25 °C
SOT363
[1]
- - 416 K/W
SOT666
[1] [2]
- - 416 K/W
PEMB17_PUMB17_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 1 September 2009 4 of 11
NXP Semiconductors
PEMB17; PUMB17
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
7. Characteristics
Table 8. Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
= −50 V; I
E
= 0 A - - −100 nA
I
CEO
collector-emitter
cut-off current
V
CE
= −30 V; I
B
= 0 A - - −1 µA
V
CE
= −30 V; I
B
= 0 A;
T
j
= 150 °C
--−50 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
= 0 A - - −110 µA
h
FE
DC current gain V
CE
= −5 V; I
C
= −5 mA 60 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA; I
B
= −0.5 mA - - −150 mV
V
I(off)
off-state input voltage V
CE
= −5 V; I
C
= −100 µA-−1.7 −1.2 V
V
I(on)
on-state input voltage V
CE
= −0.3 V; I
C
= −2 mA −4 −2.7 - V
R1 bias resistor 1 (input) 33 47 61 kΩ
R2/R1 bias resistor ratio 0.37 0.47 0.57
C
c
collector capacitance V
CB
= −10 V; I
E
= i
e
= 0 A;
f=1MHz
--3pF
PEMB17_PUMB17_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 1 September 2009 5 of 11
NXP Semiconductors
PEMB17; PUMB17
PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ
V
CE
= −5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
V
CE
= −0.3 V
(1) T
amb
= −40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
V
CE
= −5 V
(1) T
amb
= −40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
Fig 4. Off-state input voltage as a function of
collector current; typical values
I
C
(mA)
−10
−1
−10
2
−10−1
006aaa208
10
2
10
10
3
h
FE
1
(1) (2)
(3)
006aaa209
I
C
(mA)
−10
−1
−10
2
−10−1
−10
2
V
CEsat
(mV)
−10
(1)
(2)
(3)
I
C
(mA)
−10
−1
−10
2
−10−1
006aaa210
−10
−1
−10
2
V
I(on)
(V)
−10
−1
(1) (2)
(3)
006aaa211
I
C
(mA)
−10
−2
−10−1−10
−1
−1
−10
V
I(off)
(V)
−10
−1
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12

PEMB17,115

Mfr. #:
Buy PEMB17,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased TRNS DOUBL RET TAPE7
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