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NCR100-8MR

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
S
O
T
2
3
NCR100-8M
SCR
16 April 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT23 (TO-236AB)
plastic package.
2. Features and benefits
•
Sensitive gate
•
Planar passivated for voltage ruggedness and reliability
•
Surface mountable package
3. Applications
•
Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)
•
Ignition circuits
•
Low power latching circuits
•
Protection circuit / shut-down circuits: Iighting ballasts
•
Protection circuit / shut-down circuits: Switched Mode Power Supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 600 V
V
RRM
repetitive peak reverse
voltage
- - 600 V
I
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- - 8 A
I
T(AV)
average on-state
current
half sine wave; T
sp
≤ 75 °C - - 0.5 A
I
T(RMS)
RMS on-state current half sine wave; T
sp
≤ 75 °C; Fig. 1;
Fig. 2; Fig. 3
- - 0.8 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
1 - 100 µA
NXP Semiconductors
NCR100-8M
SCR
NCR100-8M All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 16 April 2015 2 / 13
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 K cathode
3 A anode
1 2
3
TO-236AB (SOT23)
sym037
A K
G
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
NCR100-8M TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking
Table 4. Marking codes
Type number Marking code
NCR100-8M W8M
P1-P3P4-P6P7-P9P10-P12P13-P14

NCR100-8MR

Mfr. #:
Buy NCR100-8MR
Manufacturer:
WeEn Semiconductors
Description:
NCR100-8M/TO-236AB/REEL 7" Q3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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