VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
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Vishay Semiconductors
Revision: 16-Jun-16
5
Document Number: 94870
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Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink)
Fig. 11 - Current Rating Characteristics
Fig. 12 - On-State Voltage Drop Characteristics
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 14 - Maximum Non-Repetitive Surge Current
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Maximum Total Power Loss (W)
0306090120150
RthSA = 0.1 K/W - Delta R
0.3 K/W
0.4 K/W
0.5 K/W
1 K/W
0.2 K/W
0
50
100
150
200
250
300
020406080
120˚
(Rect)
Tj = 150˚C
70MT...P
Total Output Current (A)
Maximum Allowable Case Temperature (°C)
40
60
80
100
120
140
40 50 60 70 80 90 100 110 120 130
120˚
(Rect)
Per Module
100MT...P
R (DC) = 0.19 K/W
thJC
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4
Tj = 150˚C
Tj = 25˚C
100MT...P
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
100
150
200
250
300
350
400
110100
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
100MT...P
Per Junction
Pulse Train Duration(s)
Peak Half Sine Wave On-state Current (A)
0
50
100
150
200
250
300
350
400
450
500
0.01 0.1 1 10
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Initial T j = 125˚C
No Voltage Reapplied
Rated V rrm Reapplied
Of Conduction May Not Be Maintained.
100MT...P
Per Junction
