APTDF500U40G
APTDF500U40G – Rev3 October, 2012
www.microsemi.com
2-4
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
F
= 500A 1.3 1.5
I
F
= 1000A 1.6
V
F
Diode Forward Voltage
I
F
= 500A T
j
= 125°C 1.2
V
T
j
= 25°C 2000
I
RM
Maximum Reverse Leakage Current V
R
= 400V
T
j
= 125°C 5000
µA
C
T
Junction Capacitance V
R
= 200V 1300 pF
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 50
t
rr
Reverse Recovery Time
T
j
= 125°C 150
ns
T
j
= 25°C 750
Q
rr
Reverse Recovery Charge
T
j
= 125°C 5250
nC
T
j
= 25°C 30
I
rr
Reverse Recovery Current
I
F
= 500A
V
R
= 268V
di/dt=1000A/µs
T
j
= 125°C 65
A
t
rr
Reverse Recovery Time 90 ns
Q
rr
Reverse Recovery Charge 10.5 µC
I
rr
Reverse Recovery Current
I
F
= 500A
V
R
= 268V
di/dt=4000A/µs
T
j
= 125°C
195 A
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal Resistance
0.08 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
To heatsink M5 2.5 3.5
Torque Mounting torque
For terminals M6 3 4
N.m
Wt Package Weight 250 g
