APTM120A65FT1G
APTM120A65FT1G – Rev 0 December, 2007
www.microsemi.com
1
5
1
8
7
Q1
Q2
56
3
4
11
NTC
12
9
10
2
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 1200 V
T
c
= 25°C 16
I
D
Continuous Drain Current
T
c
= 80°C 12
I
DM
Pulsed Drain current 105
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance
780
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 390 W
I
AR
Avalanche current (repetitive and non repetitive) 14 A
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 8™ Fast FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Phase leg
OSFET Power Module
V
DSS
= 1200V
R
DSon
= 650mΩ typ @ Tj = 25°C
I
D
= 16A @ Tc = 25°C