PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 400 Volt V
CEO
* 200mA continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-400 V
Collector-Emitter Voltage V
CEO
-400 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-200 mA
Power Dissipation P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-400 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
BR(CEO)
-400 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 V
I
E
=-100µA
Collector Cut-Off Current I
CBO
-100 nA V
CB
=-320V
Collector Cut-Off Current I
CES
-100 nA V
CE
=-320V
Emitter Cut-Off Current I
EBO
-100 nA V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.5
V
V
I
C
=-20mA, I
B
=-2mA
I
C
=-50mA, I
B
=-6mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.9 V I
C
=-50mA, I
B
=-5mA
Base-Emitter
Turn On Voltage
V
BE(on)
-0.9 V IC=-50mA, V
CE
=-10V
Static Forward Current
Transfer Ratio
h
FE
100
100
15
300
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V
I
C
=-100mA, V
CE
=-10V*
Transition
Frequency
f
T
50 MHz I
C
=-10mA, V
CE
=-20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
5pFV
CB
=-20V, f=1MHz
Switching times t
on
t
off
95
1600
ns
ns
I
C
=-50mA, V
C
=-100V
I
B1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
3-202
ZTX558
C
B
E
E-Line
TO92 Compatible
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
-
(
V
olts)
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
-
(
V
o
lts
)
-55°C
+25°C
+100°C
+175°C
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
mal
ise
d
Gain
V
B
E
(sat)
-
(
V
olts)
V
B
E
-
(
V
o
lts
)
I
C
- Collector Current (Amps)
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
h
FE
- T
ypical Gain
VCE - Collector Voltage (Volts)
Safe Operating Area
100110
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001 0.001
0.001
0.001
0.001
I
C
/I
B
=20
-55°C
+25°C
+100°C
+175°C
1000
ZTX558
3-203
