2N7002VC-7 Datasheet 2N7002VAC-7, 2N7002VC-7 | P1-P3

2N7002VC/VAC

NEW PRODUCT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram (Note 3)

• Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.003 grams (approximate)

Ordering Information (Note 4)

Part Number

Case

Packaging

2N7002VC-7

SOT563

3000/Tape & Reel

2N7002VAC-7

SOT563

3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2004

2005

2006

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

R

S

T

U

V

W

X

Y

Z

A

B

C

D

E

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

SOT563

Top View

2N7002VC

(ASK Marking Code)

2N7002VAC

(AYK Marking Code)

S

1

D

1

D

2

S

2

G

1

G

2

G

1

D

1

D

2

S

2

S

1

G

2

ASK = 2N7002VC Product Type

Marking Code

YM = Date Code Marking

Y = Year ex: R = 2004

M = Month ex: 9 = September

AYK = 2N7002VAC Product Type

Marking Code

YM = Date Code Marking

Y = Year ex: R = 2004

M = Month e

x: 9 = September

ASK YM

S

1

D

2

G

1

D

1

S

2

G

2

AYK YM

S

1

D

2

G

1

D

1

S

2

G

2

2N7002VC/VAC

Document number: DS30639 Rev. 7 - 2

1 of 4

www.diodes.com

August 2014

2N7002VC/VAC

NEW PRODUCT

Maximum Ratings @T

A

= +25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Drain-Source Voltage

V

DSS

60

V

Drain-Gate Voltage R

GS

≤ 1.0MΩ

V

DGR

60

V

Gate-Source Voltage (Note 5) Continuous

Pulsed

V

GSS

±20

±40

V

Drain Current (Note 5) Continuous

I

D

280

mA

Drain Current (Note 5) Pulsed

I

DM

1.5

A

Thermal Characteristics @T

A

= +25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Total Power Dissipation

P

D

150

mW

Thermal Resistance, Junction to Ambient

R

θ

JA

833 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C

Electrical Characteristics @T

A

= +25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

BV

DSS

60

70



V

GS

= 0V, I

D

= 10µA

Zero Gate Voltage Drain Current @ T

C

= +25°C

@ T

C

= +125°C

I

DSS

 

1.0

500

µA

V

DS

= 60V,

V

GS

= 0V

Gate-Body Leakage

I

GSS



±100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTIC (Note 6)

Gate Threshold Voltage

V

GS(th)

1.0



2.5

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS (ON)



7.5

13.5

Ω

V

GS

= 5V, I

D

= 0.05A,

V

GS

= 10V, I

D

= 0.5A, T

j

= 125°C

On-State Drain Current

I

D(ON)

0.5

1.0



A

V

GS

= 10V,

V

DS

= 7.5V

Forward Transconductance

g

FS

80



mS

V

DS

= 10V, I

D

= 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss



50

pF

V

DS

= 25V, V

GS

= 0V, f = 1.0MHz

Output Capacitance

C

oss



25

pF

Reverse Transfer Capacitance

C

rss



5.0

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t

D(ON)



20

ns

V

DD

= 30V, I

D

= 0.2A, R

L

= 150Ω,

V

GEN

= 10V, R

GEN

= 25Ω

Turn-Off Delay Time

t

D(OFF)



20

ns

Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

2N7002VC/VAC

Document number: DS30639 Rev. 7 - 2

2 of 4

www.diodes.com

August 2014

2N7002VC/VAC

NEW PRODUCT

-50

0

50 100

150

250

200

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Fig. 1, Derating Curve - Total

A

°

P , POWER DISSIPATION (mW)

d

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

SOT563

Dim

Min

Max

Typ

A

0.15

0.30

0.20

B

1.10

1.25

1.20

C

1.55

1.70

1.60

D

-

0.50

G

0.90

1.10

1.00

H

1.50

1.70

1.60

K

0.55

0.60

L

0.10

0.30

0.20

M

0.10

0.18

0.11

All Dimensions in mm

Dimensions

Value (in mm)

Z

2.2

G

1.2

X

0.375

Y

0.5

C1

1.7

C2

0.5

A

M

L

B

C

H

K

G

D

X

Z

Y

C1

C2

G

2N7002VC/VAC

Document number: DS30639 Rev. 7 - 2

3 of 4

www.diodes.com

August 2014

2N7002VC-7

2N7002VC-7

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