TSM3401
Taiwan Semiconductor
Document Number: DS_P0000072 1 Version: D15
P-Channel Power MOSFET
-30V, -3A, 60mΩ
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-
resistance
● Pb-free plating
● RoHS compliant
● Halogen-free package
KEY PERFORMANCE PARAMETERS
PARAMETER VALUE UNIT
V
DS
-30 V
R
DS(on)
(max)
V
GS
= -10V
60
mΩ
V
GS
= -4.5V
90
Q
g
9.52 nC
Application
● Load Switch
● PA Switch
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-30
V
Gate-Source Voltage V
GS
±20
V
Continuous Drain Current
(Note 1)
T
A
= 25°C I
D
-3
A
Pulsed Drain Current
(Note 2)
I
DM
-10 A
Continuous Source Current (Diode Conduction) I
S
-1.9 A
Total Power Dissipation
T
A
= 25°C
P
DTOT
1.25
W
T
A
= 70°C 0.8
Operating Junction and Storage Temperature Range T
J
, T
STG
- 55 to +150 °C
PARAMETER SYMBOL LIMIT UNIT
Junction to Case Thermal Resistance R
ӨJC
75 °C/W
Junction to Ambient Thermal Resistance R
ӨJA
100 °C/W
Notes: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
