Symbol Min Typ Max Units
600
700
BV
DSS
/∆TJ
0.7
V/
o
C
1
10
I
GSS
Gate-Body leakage current
±100
nΑ
V
GS(th)
Gate Threshold Voltage
3.4 4 4.5 V
R
DS(ON)
3.9 4.7 Ω
g
FS
2.8 S
V
SD
0.79 1 V
I
S
Maximum Body-Diode Continuous Current 2 A
I
SM
6 A
C
iss
295 pF
C
oss
30 pF
C
rss
2.3 pF
R
g
3.2 Ω
Q
g
6.5 11 nC
Q
gs
1.5 nC
Q
gd
1.8 nC
t
D(on)
16 ns
t
r
11 ns
Maximum Body-Diode Pulsed Current
C
Input Capacitance
Output Capacitance
Turn-On DelayTime
I
DSS
Zero Gate Voltage Drain Current
V
DS
=600V, V
GS
=0V
Gate Drain Charge
V
DS
=5V,
I
D
=250µA
V
DS
=480V, T
J
=125°C
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=1A
Forward Transconductance
DYNAMIC PARAMETERS
Diode Forward Voltage
Gate resistance f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=2A
Gate Source Charge
µA
V
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
V
DS
=0V, V
GS
=±30V
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
BV
DSS
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=1A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
V
GS
=10V, V
DS
=300V, I
D
=2A,
R
=25Ω
t
f
14 ns
t
rr
268
ns
Q
rr
1.6
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
I
F
=2A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Time
I
F
=2A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=1.8A, V
DD
=150V, R
G
=10Ω, Starting T
J
=25°C.
I. L=1.0mH, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C.
Rev.1.0: May 2014 www.aosmd.com Page 2 of 6
