DF2B7ACT
4
7.
7.
7.
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Electrostatic discharge voltage (IEC61000-4-2) (Contact)
Electrostatic discharge voltage (IEC61000-4-2) (Air)
Peak pulse power (tp = 8/20 µs)
Peak pulse current (tp = 8/20 µs)
Junction temperature
Storage temperature
Symbol
V
ESD
P
PK
I
PP
T
j
T
stg
Note
(Note 1)
(Note 2)
Rating
±30
±30
80
4
150
-55 to 150
Unit
kV
W
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
8.
8.
8.
8. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
V
RWM
: Working peak reverse voltage
V
BR
: Reverse breakdown voltage
I
BR
: Reverse breakdown current
I
R
: Reverse current
V
C
: Clamp voltage
I
PP
: Peak pulse current
R
DYN
: Dynamic resistance
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Definitions of Electrical Characteristics
Characteristics
Working peak reverse voltage
Total capacitance
Dynamic resistance
Reverse breakdown voltage
Reverse current
Clamp voltage
Symbol
V
RWM
C
t
R
DYN
V
BR
I
R
V
C
Note
(Note 1)
(Note 2)
(Note 3)
(Note 2)
Test Condition
V
R
= 0 V, f = 1 MHz
I
BR
= 1 mA
V
RWM
= 5.5 V
I
PP
= 1 A
I
PP
= 4 A
I
TLP
= 16 A
I
TLP
= 30 A
Min
5.8
Typ.
8.5
0.2
6.8
8
11
12
15
Max
5.5
10
7.8
100
20
Unit
V
pF
Ω
V
nA
V
V
Note 1: Recommended operating condition.
Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristics between I
PP1
= 8 A and I
PP2
= 16 A.
Note 3: Based on IEC61000-4-5 8/20 µs pulse.
2018-01-18
Rev.2.0
©2016-2018
Toshiba Electronic Devices & Storage Corporation
