VO4154, VO4156
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 23-Feb-12
4
Document Number: 84797
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Diode Forward Voltage vs. Forward Current
Fig. 3 - Diode Reverse Voltage vs. Temperature
Fig. 4 - Leakage Current vs. Ambient Temperature
Fig. 5 - On-State Current vs. On-State Voltage
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification (according to IEC68 part 1) 55/100/21
Pollution degree (DIN VDE 0109) 2
Comparative tracking index per DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110 175 399
175 399
V
IOTM
V
IOTM
8000 V
V
IORM
V
IORM
890 V
P
SO
P
SO
500 mW
I
SI
I
SI
250 mA
T
SI
T
SI
175 °C
Creepage distance 7mm
Crearance distance 7mm
0.7
0.9
1.1
1.3
1.5
0.1 1.0 10.0
I
F
(mA)
V
F
(V)
19660
100.0
32
34
36
38
40
42
- 60 - 40 - 20 0 20 40 60 80 100
Temperature (ºC)
V
R
(V)
1
10
100
1000
10 000
0 20406080100
T
A
- Ambient Temperature (°C)
I
DRM
- Leakage Current (nA)
20008
I
RDM
at 630 V
1
10
100
1000
1.0 1.5 2.0 2.5 3.0 3.5
V
TM
- On-State Voltage (V)
I
TM
- On-State Current (mA)
19685
