MBR7530R

V
RRM
= 20 V - 100 V
I
F
= 75 A
Features
• High Surge Capability DO-5 Package
• Types up to 100 V V
RRM
Parameter Symbol MBR7520 (R) MBR7530 (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
20 30 V
Silicon Power
Schottk
y
Diode
MBR7520 thru MBR7540R
MBR7540 (R)
35
MBR7535 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
40
pp g
RMS reverse voltage
V
RMS
14 21 V
DC blocking voltage
V
DC
20 30 V
Continuous forward current
I
F
75 75 A
Operating temperature
T
j
-65 to 150 -65 to 150 °C
Storage temperature
T
stg
-65 to 175 -65 to 175 °C
Parameter Symbol MBR7520 (R) MBR7530(R) Unit
Diode forward voltage 0.65 0.65
55
150 150
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
1.0 1.0 °C/W
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
150
A1000
V
R
= 20 V, T
j
= 25 °C
I
F
= 75 A, T
j
= 25 °C
T
C
100 °C
Conditions
25
1000 1000
-65 to 175
75 75
1000
-65 to 175
MBR7540 (R)
55
MBR7535 (R)
1.0
V
R
= 20 V, T
j
= 125 °C
1.0
0.65 0.65
150
mA
V
-65 to 150 -65 to 150
T
C
= 25 °C, t
p
= 8.3 ms
28
4035
www.genesicsemi.com
1
MBR7520 thru MBR7540R
www.genesicsemi.com
2

MBR7530R

Mfr. #:
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 30V - 75A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union