Micropower Ultra-Sensitive Hall-Effect Switches
A3213 and
A3214
4
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
MAGNETIC CHARACTERISTICS
1
valid over operating voltage and temperature range, unless otherwise noted
Characteristic Symbol
2
Test Conditions Min. Typ.
3
Max. Units
4
Operate Points
B
OPS
South pole to branded side – 42 70 G
B
OPN
North pole to branded side –70 –48 – G
Release Points
B
RPS
South pole to branded side 10 32 – G
B
RPN
North pole to branded side – –38 –10 G
Hysteresis B
hys
|B
OPx
- B
RPx
|–10–G
1
As used here, negative flux densities are defined as less than zero (algebraic convention) and -50 G is less than +10 G.
2
B
OPx
= operate point (output turns ON); B
RPx
= release point (output turns OFF).
3
Typical Data is at T
A
= 25°C and V
DD
= 3.0 V and is for design information only.
4
1 gauss (G) is exactly equal to 0.1 millitesla (mT).
ELECTRICAL CHARACTERISTICS valid over operating voltage and temperature range, unless otherwise noted
Characteristic Symbol Test Conditions Min. Typ.
1
Max. Units
Supply Voltage Range V
DD
Operating
1)
2.4 3.0 5.5 V
Output Leakage Current I
OFF
V
OUT
= 5.5 V, B
RPN
< B < B
RPS
– <1.0 1.0 μA
Output On Voltage V
OUT(ON)
Output on, I
OUT
= 1 mA, V
DD
= 3.0 V – 100 300 mV
Awake Time t
awake
–6090μs
Period t
period
A3213 – 240 360 μs
A3214, T
A
= 25°C, V
DD
= 3 V – 60 90 ms
Duty Cycle DC
A3213 – 25 – %
A3214 – 0.10 – %
Chopping Frequency f
C
– 340 – kHz
Supply Current
I
DD(EN)
Chip awake (enabled) – – 2.0 mA
I
DD(DIS)
Chip asleep (disabled) – – 8.0 μA
I
DD(AVG)
A3213 – 309 850 μA
A3214 – 6 22 μA
1
Typical Data is at T
A
= 25°C and V
DD
= 3.0 V and is for design information only.
2
Operate and release points will vary with supply voltage. B
OPx
= operate point (output turns ON); B
RPx
= release point (output turns OFF).
