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V2F6-M3/H

P1-P3P4-P6
V2F6
www.vishay.com
Vishay General Semiconductor
Revision: 24-Jan-18
1
Document Number: 87560
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifiers
FEATURES
• Trench MOS Schottky technology
• Low profile package
• Ideal for automated placement
• Low forward voltage drop, low power losses
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Wave and reflow solderable
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection in commercial, industrial,
and automotive applications.
MECHANICAL DATA
Case: SMF (DO-219AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
Notes
(1)
Free air, mounted on FR4 PCB, 2 oz. standard footprint
(2)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
60 V
I
FSM
50 A
V
F
at I
F
= 2 A (T
A
= 125 °C) 0.45 V
T
J
max. 150 °C
Package SMF (DO-219AB)
Diode variations Single
Top view Bottom view
SMF (DO-219AB)
TMBS
®
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V2F6 UNIT
Device marking code V26
Maximum repetitive peak reverse voltage V
RRM
60 V
Maximum average forward rectified current (fig.1) I
F(AV)
(1)
2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
50 A
Operating junction temperature range T
J
(2)
-40 to +150
°C
Storage temperature range T
STG
-55 to +150
V2F6
www.vishay.com
Vishay General Semiconductor
Revision: 24-Jan-18
2
Document Number: 87560
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
<1/R
JA
(2)
Device mounted on FR4 PCB, 2 oz. standard footprint, thermal resistance R
JA
– junction-to-ambient; thermal resistance
R
JM
– junction-to-mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 1.0 A
T
A
= 25 °C
V
F
(1)
0.46 -
V
I
F
= 2.0 A 0.52 0.60
I
F
= 1.0 A
T
A
= 125 °C
0.36 -
I
F
= 2.0 A 0.45 0.53
Reverse current V
R
= 60 V
T
A
= 25 °C
I
R
(2)
-0.48
mA
T
A
= 125 °C 2 10
Typical junction capacitance 4.0 V, 1 MHz C
J
250 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °c unless otherwise noted)
PARAMETER SYMBOL V2F6 UNIT
Typical thermal resistance
R
JA
(1)(2)
125
°C/W
R
JM
(2)
23
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V2F6-M3/H 0.015 H 3000 7" diameter plastic tape and reel
V2F6-M3/I 0.015 I 10 000 13" diameter plastic tape and reel
V2F6HM3/H
(1)
0.015 H 3000 7" diameter plastic tape and reel
V2F6HM3/I
(1)
0.015 I 10 000 13" diameter plastic tape and reel
V2F6
www.vishay.com
Vishay General Semiconductor
Revision: 24-Jan-18
3
Document Number: 87560
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Average Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
0.4
0.8
1.2
1.6
2.0
2.4
0255075100125150
Average Forward Rectied Current (A)
Mount Temperature (°C)
T
M
measured at cathode terminal mount
typical values
Rth
JM
= 23 ƱC/W
Rth
JA
= 125 ƱC/W
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 0.4 0.8 1.2 1.6 2 2.4
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.1
1
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 25 °C
T
J
= 100 °C
T
J
= 150 °C
T
J
= -40 °C
T
J
= 125 °C
0.00001
0.0001
0.001
0.01
0.1
1
10
20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 100 °C
T
J
= 25 °C
T
J
= -40 °C
T
J
= 150 °C
T
J
= 125 °C
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
10
100
1000
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to ambient
P1-P3P4-P6

V2F6-M3/H

Mfr. #:
Buy V2F6-M3/H
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 60V 2A SMF(DO-219AB) TMBS
Lifecycle:
New from this manufacturer.
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