OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BUK7Y25-40B,115

P1-P3P4-P6P7-P9P10-P12P13-P15
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BUK7Y25-40B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
j
≥ 25 °C; T
j
≤ 175°C --40V
I
D
drain current V
GS
=10V; T
mb
=25°C;
see Figure 1
; see Figure 4
--35.3A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --59.4W
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=20A;
T
j
=25°C; see Figure 12;
see Figure 13
- 2025mΩ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
=35.3A; V
sup
≤ 40 V;
R
GS
=50Ω; V
GS
=10V;
T
j(init)
= 25 °C; unclamped
--37mJ
Dynamic characteristics
Q
GD
gate-drain charge I
D
=20A; V
DS
=32V;
V
GS
= 10 V; see Figure 14
-5.12-nC
BUK7Y25-40B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 7 April 2010 2 of 14
NXP Semiconductors
BUK7Y25-40B
N-channel TrenchMOS standard level FET
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1Ssource
SOT669 (LFPAK)
2Ssource
3Ssource
4 G gate
mb D mounting base; connected to
drain
mb
1234
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
BUK7Y25-40B LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK7Y25-40B,115

Mfr. #:
Buy BUK7Y25-40B,115
Manufacturer:
Nexperia
Description:
MOSFET N-CH 40 V 35.3 A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet