Product Standards
Zener Diode
DZ3X056D0L
Absolute Maximum Ratings Ta = 25 C
*1:
Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)
(2 Diode total)
Solder in ( 1.0 mm x 1.0 mm)
*2:
Electrical Characteristics Ta = 25 C 3 C
1.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page
Note)
Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
0.5 μAIR VR = 2.5 V
200
+150 °C
200
Zener rise operating resistance RZK IZ = 0.5 mA
Total power dissipation
*1
PT mW
Electrostatic discharge
*2
Storage temperature Tstg -55 to
Temperature coefficient of zener voltage
*3
SZ IZ = 5 mA
Zener voltage
*1, *2
VZ IZ = 5 mA
Zener operating resistance RZ IZ = 5 mA
Reverse current
Packaging
Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)
Parameter Symbol Rating Unit
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol
0W
Code
1. Cathode1
2. Cathode2
TO-236AA/SOT-23
Panasonic
DZ3X056D0L
Silicon epitaxial planar type
For surge absorption circuit
Features
Low zener operating resistance Rz
Excellent rising characteristics of zener current Iz
Halogen-free / RoHS compliant
Mini3-G3-B
JEITA SC-59A
3. Anode1,2
1of4
Unit: mm
Min Typ
±10 kV
Junction temperature Tj 150 °C
ESD
V
Parameter Symbol Conditions
Forward voltage VF IF = 10 mA
Unit
5.32
Max
5.88
1.0
Internal Connection
2.0 mV/°C
V
40
+85 °COperating ambient temperature Topr -40 to
12
3
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
