OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTD4905N-1G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2010
June, 2010 − Rev. 2
1 Publication Order Number:
NTD4905N/D
NTD4905N
Power MOSFET
30 V, 67 A, Single N−Channel, DPAK/IPAK
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain
Current (R
q
JA
)
(Note 1)
Steady
State
T
A
= 25°C
I
D
16.3
A
T
A
= 100°C 11.5
Power Dissipation
(R
q
JA
) (Note 1)
T
A
= 25°C P
D
2.63 W
Continuous Drain
Current (R
q
JA
) (Note
2)
T
A
= 25°C
I
D
12
A
T
A
= 100°C 8.3
Power Dissipation
(R
q
JA
) (Note 2)
T
A
= 25°C P
D
1.4 W
Continuous Drain
Current (R
q
JC
)
(Note 1)
T
C
= 25°C
I
D
67
A
T
C
= 100°C 47
Power Dissipation
(R
q
JC
) (Note 1)
T
C
= 25°C P
D
44 W
Pulsed Drain Current
t
p
=10ms
T
A
= 25°C I
DM
264 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
90 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
40 A
Drain to Source dV/dt dV/dt 6.5 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
L = 0.1 mH, I
L(pk)
= 35 A, R
G
= 25 W)
E
AS
61 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
CASE 369D
IPAK
(Straight Lead
DPAK)
30 V
4.5 mW @ 10 V
R
DS(on)
MAX
67 A
I
D
MAXV
(BR)DSS
7.0 mW @ 4.5 V
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
2
3
4
CASE 369AD
IPAK
(Straight Lead)
1
2
3
4
N−Channel
D
S
G
YWW
49
05NG
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
YWW
49
05NG
YWW
49
05NG
Y = Year
WW = Work Week
4905N = Device Code
G = Pb−Free Package
1
2
3
4
NTD4905N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
3.4
°C/W
Junction−to−Tab (Drain)
R
q
JC−TAB
4.3
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
57
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
109
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
15 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.6 2.2 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V
I
D
= 30 A 3.9 4.5
mW
I
D
= 15 A 3.9
V
GS
= 4.5 V
I
D
= 30 A 5.4 7.0
I
D
= 15 A 5.4
Forward Transconductance gFS V
DS
= 1.5 V, I
D
= 30 A 65 S
CHARGES AND CAPACITANCES
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
2340
pF
Output Capacitance C
oss
763
Reverse Transfer Capacitance C
rss
27
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
14
nC
Threshold Gate Charge Q
G(TH)
3.7
Gate−to−Source Charge Q
GS
6.8
Gate−to−Drain Charge Q
GD
2.2
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 30 A
33 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
13.8
ns
Rise Time t
r
20.5
Turn−Off Delay Time t
d(off)
21.3
Fall Time t
f
5.4
Turn−On Delay Time t
d(on)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
9.7
ns
Rise Time t
r
19.7
Turn−Off Delay Time t
d(off)
27.8
Fall Time t
f
3.6
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4905N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.86 1.1
V
T
J
= 125°C 0.74
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt= 100 A/ms,
I
S
= 30 A
37.5
ns
Charge Time ta 19
Discharge Time tb 18.5
Reverse Recovery Time Q
RR
31 nC
PACKAGE PARASITIC VALUES
Source Inductance (Note 5) L
S
T
A
= 25°C
2.85
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK (Note 5) L
D
1.88
Gate Inductance (Note 5) L
G
4.9
Gate Resistance R
G
1.0 2.0
W
5. Assume terminal length of 110 mils.
P1-P3P4-P6P7-P8

NTD4905N-1G

Mfr. #:
Buy NTD4905N-1G
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 67A SGL IPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet