BD543B-S Datasheet BD543C-S, BD543B-S | P1-P3

BD543, BD543A, BD543B, BD543C

NPN SILICON POWER TRANSISTORS

1

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

Designed for Complementary Use with the

BD544 Series

70 W at 25°C Case Temperature

8 A Continuous Collector Current

10 A Peak Collector Current

Customer-Specified Selections Available

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for t

p

≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

TINUEULAVLOBMYSGNITAR

Collector-base voltage (I

E

= 0)

BD543

BD543A

BD543B

BD543C

V

CBO

40

60

80

100

V

Collector-emitter voltage (I

B

= 0)

BD543

BD543A

BD543B

BD543C

V

CEO

40

60

80

100

V

Emitter-base voltage V

EBO

5 V

Continuous collector current I

C

8 A

I)1 etoN ees( tnerruc rotcelloc kaeP

CM

10 A

Continuous device dissipation at (or below) 25°C P)2 etoN ees( erutarepmet esac

tot

70 W

P)3 etoN ees( erutarepmet ria eerf C°52 )woleb ro( ta noitapissid ecived suounitnoC

tot

2 W

Operating free air temperature r Tegna

A

-65 to +150 °C

Tegnar erutarepmet noitcnuj gnitarepO

j

-65 to +150 °C

Storage temperature range T

stg

-65 to +150 °C

Tsdnoces 01 rof esac morf mm 2.3 erutarepmet daeL

L

260 °C

B

C

E

TO-220 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

1

2

3

This series is obsolete and

not recommended for new designs.

OBSOLETE

BD543, BD543A, BD543B, BD543C

NPN SILICON POWER TRANSISTORS

2

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 4. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

(BR)CEO

Collector-emitter

breakdown voltage

I

C

= 30 mA

(see Note 4)

I

B

= 0

BD543

BD543A

BD543B

BD543C

40

60

80

100

V

I

CES

Collector-emitter

cut-off current

V

CE

= 40 V

V

CE

= 60 V

V

CE

= 80 V

V

CE

=100 V

V

BE

=0

V

BE

=0

V

BE

=0

V

BE

=0

BD543

BD543A

BD543B

BD543C

0.4

mA

I

CEO

Collector cut-off

current

V

CE

= 30 V

V

CE

= 60 V

I

B

=0

I

B

=0

BD543/543A

BD543B/543C

0.7

mA

I

EBO

Emitter cut-off

current

V

EB

= 5 V I

C

=0 1 mA

h

FE

Forward current

transfer ratio

V

CE

= 4 V

V

CE

= 4 V

V

CE

= 4 V

I

C

= 1 A

I

C

= 3 A

I

C

= 5 A

(see Notes 4 and 5)

60

40

15

V

CE(sat)

Collector-emitter

saturation voltage

I

B

= 0.3 A

I

B

= 1 A

I

B

= 1.6 A

I

C

= 3A

I

C

= 5A

I

C

= 8A

(see Notes 4 and 5)

0.5

1

V

BE

Base-emitter

voltage

V

CE

= 4 V I

C

= 5 A (see Notes 4 and 5) 1.4 V

h

fe

Small signal forward

current transfer ratio

V

CE

= 10 V I

C

= 0.5 A f = 1 kHz 20

|

h

fe

|

Small signal forward

current transfer ratio

V

CE

= 10 V I

C

= 0.5 A f = 1 MHz 3

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

θJC

Junction to case thermal resistance 1.79 °C/W

R

θJA

Junction to free air thermal resistance 62.5 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

†

MIN TYP MAX UNIT

t

on

Tu r n -o n t i m e I

C

= 6 A

V

BE(off)

= -4 V

I

B(on)

= 0.6 A

R

L

= 5 Ω

I

B(off)

= -0.6 A

t

p

= 20 µs, dc ≤ 2%

0.6 µs

t

off

Turn-off time 1µs

OBSOLETE

BD543, BD543A, BD543B, BD543C

NPN SILICON POWER TRANSISTORS

3

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TYPICAL CHARACTERISTICS

Figure 1. Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·1 1·0 10

h

FE

- DC Current Gain

1·0

10

100

1000

TCS633AI

V

CE

= 4 V

T

C

= 25°C

t

p

= 300 µs, duty cycle < 2%

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

I

B

- Base Current - A

0·001 0·01 0·1 1·0 10

V

CE(sat)

- Collector-Emitter Saturation Voltage - V

0·01

0·1

1·0

10

TCS633AE

I

C

= 300 mA

I

C

= 1 A

I

C

= 3 A

I

C

= 6 A

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

I

C

- Collector Current - A

0·1 1·0 10

V

BE

- Base-Emitter Voltage - V

0·6

0·7

0·8

0·9

1·0

1·1

1·2

TCS633AF

V

CE

= 4 V

T

C

= 25°C

OBSOLETE

BD543B-S

BD543B-S

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