VS-FA40SA50LC
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Vishay Semiconductors
Revision: 01-Jun-16
4
Document Number: 94803
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Fig. 5 - Typical Drain-to-Source Current Output Characteristics
at T
J
= 150 °C
Fig. 6 - Normalized On-Resistance vs. Temperature
Fig. 7 - Typical Body Diode Forward Voltage Drop Characeristics
Fig. 8 - Typical MOSFET Transfer Characteristics
Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current
Fig. 10 - Typical MOSFET Threshold Voltage
V , Drain-to-Source Voltage (V)
, Drain-to-Source Current (A)
DS
I
DS
, Drain-to-Source Current (A)
0
10
20
30
40
50
60
02468101214161820
V
GS
= 5 V
V
GS
= 6 V
V
GS
= 10 V
V
GS
= 12 V
V
GS
= 15 V
V
GS
= 7 V
V
GS
= 8 V
80
100
120
140
160
180
200
220
240
260
280
300
320
0 20 40 60 80 100 120 140 160
T - Junction Temperature (°C)
R - Drain-to-Source On Resistance (mΩ)
J
DS(on)
V=
I=
GS
D
10 V
40 A
0
40
80
120
160
200
240
280
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
FSD
- Forward Source to Drain Current (A)
V
FSD
-
Drain to Source Forward Voltage
Drop Characteristics (V)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 150 °C
0
20
40
60
80
100
120
140
2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5
I
D
- Drain to Source current (A)
V
GS
- Gate to Source Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.0001
0.001
0.01
0.1
1
10
0 100 200 300 400 500 600
I
DSS
- Drain to Source Current (mA)
V
DSS
- Drain to Source Voltage (V)
0.00001
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.20 0.40 0.60 0.80 1.00
V
GSth
- Threshold Voltage (V)
I
D
(mA)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
