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MC34152DR2

P1-P3P4-P6P7-P9P10-P12
© Semiconductor Components Industries, LLC, 2014
September, 2014− Rev. 14
1 Publication Order Number:
MC34152/D
MC34152, MC33152,
NCV33152
High Speed Dual
MOSFET Drivers
The MC34152/MC33152 are dual noninverting high speed drivers
specifically designed for applications that require low current digital
signals to drive large capacitive loads with high slew rates. These
devices feature low input current making them CMOS/LSTTL logic
compatible, input hysteresis for fast output switching that is
independent of input transition time, and two high current totem pole
outputs ideally suited for driving power MOSFETs. Also included is
an undervoltage lockout with hysteresis to prevent system erratic
operation at low supply voltages.
Typical applications include switching power supplies, dc−to−dc
converters, capacitor charge pump voltage doublers/inverters, and
motor controllers.
This device is available in dual−in−line and surface mount packages.
Features
• Two Independent Channels with 1.5 A Totem Pole Outputs
• Output Rise and Fall Times of 15 ns with 1000 pF Load
• CMOS/LSTTL Compatible Inputs with Hysteresis
• Undervoltage Lockout with Hysteresis
• Low Standby Current
• Efficient High Frequency Operation
• Enhanced System Performance with Common Switching Regulator
Control ICs
• NCV Prefix for Automotive and Other Applications Requiring Site
and Change Controls
• These are Pb−Free and Halide−Free Devices
Figure 1. Representative Diagram
-
+
2
4
V
CC
6
5.7V
Drive Output A
7
100k
Drive Output B
5
100k
GND 3
Logic
Input A
Logic
Input B
PDIP−8
P SUFFIX
CASE 626
MARKING
DIAGRAMS
1
8
1
8
MC3x152P
AWL
YYWWG
SOIC−8
D SUFFIX
CASE 751
1
8
x = 3 or 4
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
PIN CONNECTIONS
1 8 N.C.N.C.
(Top View)
2 7 Drive Output ALogic Input A
36V
CC
GND
4 5 Drive Output BLogic Input B
3x152
ALYWG
G
1
8
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
MC34152, MC33152, NCV33152
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Power Supply Voltage V
CC
20 V
Logic Inputs (Note 1) V
in
−0.3 to +V
CC
V
Drive Outputs (Note 2)
Totem Pole Sink or Source Current
Diode Clamp Current (Drive Output to V
CC
)
I
O
I
O(clamp)
1.5
1.0
A
Power Dissipation and Thermal Characteristics
D Suffix, Plastic Package Case 751
Maximum Power Dissipation @ T
A
= 50°C
Thermal Resistance, Junction−to−Air
P Suffix, Plastic Package, Case 626
Maximum Power Dissipation @ T
A
= 50°C
Thermal Resistance, Junction−to−Air
P
D
R
q
JA
P
D
R
q
JA
0.56
180
1.0
100
W
°C/W
W
°C/W
Operating Junction Temperature T
J
+150 °C
Operating Ambient Temperature MC34152
Operating Ambient Temperature MC33152
Operating Ambient Temperature MC33152V, NCV33152
T
A
0 to +70
−40 to +85
−40 to +125
°C
Storage Temperature Range T
stg
−65 to +150 °C
Electrostatic Discharge Sensitivity (ESD) (Note 3)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
2000
200
1500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V
CC
, whichever is less.
2. Maximum package power dissipation limits must be observed.
3. ESD protection per following tests:
JEDEC Standard JESD22−A114−F for HBM
JEDEC Standard JESD22−A115−A for MM
JEDEC Standard JESD22−C101D for CDM.
MC34152, MC33152, NCV33152
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (V
CC
= 12 V, for typical values T
A
= 25°C, for min/max values T
A
is the operating ambient
temperature range that applies [Note 4], unless otherwise noted.)
Characteristics Symbol Min Typ Max Unit
LOGIC INPUTS
Input Threshold Voltage
Output Transition High−to−Low State
Output Transition Low−to−High State
V
IH
V
IL
−
0.8
1.75
1.58
2.6
−
V
Input Current
High State (V
IH
= 2.6 V)
Low State (V
IL
= 0.8 V)
I
IH
I
IL
−
−
100
20
300
100
mA
DRIVE OUTPUT
Output Voltage
Low State (I
sink
= 10 mA)
Low State (I
sink
= 50 mA)
Low State (I
sink
= 400 mA)
High State (I
source
= 10 mA)
High State (I
source
= 50 mA)
High State (I
source
= 400 mA)
V
OL
V
OH
−
−
−
10.5
10.4
10
0.8
1.1
1.8
11.2
11.1
10.8
1.2
1.5
2.5
−
−
−
V
Output Pull−Down Resistor R
PD
− 100 − kW
SWITCHING CHARACTERISTICS (T
A
= 25°C)
Propagation Delay (C
L
= 1.0 nF)
Logic Input to: Drive Output Rise (10% Input to 10% Output)
Drive Output Fall (90% Input to 90% Output)
t
PLH (IN/OUT)
t
PHL (IN/OUT)
−
−
55
40
120
120
ns
Drive Output Rise Time (10% to 90%) C
L
= 1.0 nF
Drive Output Rise Time (10% to 90%) C
L
= 2.5 nF
t
r
−
−
14
36
30
−
ns
Drive Output Fall Time (90% to 10%) C
L
= 1.0 nF
Drive Output Fall Time (90% to 10%) C
L
= 2.5 nF
t
f
−
−
15
32
30
−
ns
TOTAL DEVICE
Power Supply Current
Standby (Logic Inputs Grounded)
Operating (C
L
= 1.0 nF Drive Outputs 1 and 2, f = 100 kHz)
I
CC
−
−
6.0
10.5
8.0
15
mA
Operating Voltage V
CC
6.1 − 18 V
UNDERVOLTAGE LOCKOUT
Startup Threshold V
th
− 5.8 6.1 V
Minimum Operating Voltage After Turn−On (V
CC
) V
CC(min)
− 5.3 − V
4. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
T
low
= 0°C for MC34152, −40°C for MC33152, −40°C for MC33152V
T
high
= +70°C for MC34152, +85°C for MC33152, +125°C for MC33152V
NCV33152: T
low
= −40°C, T
high
= +125°C. Guaranteed by design.
P1-P3P4-P6P7-P9P10-P12

MC34152DR2

Mfr. #:
Buy MC34152DR2
Manufacturer:
ON Semiconductor
Description:
IC MOSFET DRIVER DUAL HS 8-SOIC
Lifecycle:
New from this manufacturer.
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