© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 6
1 Publication Order Number:
MTB50P03HDL/D
MTB50P03HDL
Preferred Device
Power MOSFET
50 Amps, 30 Volts, Logic Level
P−Channel D
2
PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Pb−Free Packages are Available
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−Source Voltage V
DSS
30 Vdc
Drain−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
30 Vdc
Gate−Source Voltage
− Continuous
− Non−Repetitive (t
p
≤ 10 ms)
V
GS
V
GSM
±15
± 20
Vdc
Vpk
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (t
p
≤ 10 ms)
I
D
I
D
I
DM
50
31
150
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ T
C
= 25°C, when
mounted with the minimum recommended pad size
P
D
125
1.0
2.5
W
W/°C
W
Operating and Storage Temperature Range T
J
, T
stg
− 55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, Peak
I
L
= 50 Apk, L = 1.0 mH, R
G
= 25 W)
E
AS
1250 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient, when mounted with the
minimum recommended pad size
R
q
JC
R
q
JA
R
q
JA
1.0
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTB
50P03HG
AYWW
1
Gate
4
Drain
2
Drain
3
Source
50 AMPERES
30 VOLTS
R
DS(on)
= 25 mW
D
2
PAK
CASE 418B
STYLE 2
1
2
3
4
P−Channel
MTB50P03H = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION