© IXYS All rights reserved
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20070807
VUO 18
IXYS reserves the right to change limits, test conditions and dimensions.
I
dAV
= 18 A
V
RRM
= 1200-1600 V
Three Phase Rectifier Bridge
with Semi Fast Diodes
Features
• Package with ¼" fast-on terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1600 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature & power cycling
•
Up to 10 dB lower EMI/RFI
compared to standard rectifier
Symbol Conditions Maximum Ratings
I
dAV
I
dAVM
T
C
= 85°C, module
T
C
= 63°C, module
14
18
A
A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
300
330
A
A
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
270
300
A
A
I
2
t
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
450
460
A
2
s
A
2
s
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
365
380
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
150
-40...+150
°C
°C
°C
V
ISOL
50/60 Hz, RMS t = 1 min
I
ISOL
< 1 mA t = 1 s
2500
3000
V~
V~
M
d
Mounting torque (M5)
(10-32 UNF)
2 ±10%
18 ±10%
Nm
lb.in.
Weight
Typ. 22 g
V
RSM
V
RRM
Type
V
DSM
V
DRM
V V
1200 1200 VUO 18-12DT8
1400 1600 VUO 18-14DT8
1600 1800 VUO 18-16DT8
Symbol Conditions Characteristic Values
I
R
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= T
VJM
0.3
5.0
mA
mA
V
F
I
F
= 55 A T
VJ
= 25°C 1.85 V
V
T0
r
t
For power-loss calculations only 1.2
16
V
mW
t
rr
I
C
= 10 A T
VJ
= 25°C
-di/dt = 10 A/µs, V
R
= ½ V
RRM
1.5 µs
R
thJC
R
thCH
per diode; 120° el.
per module
per diode; 120° el.
per module
9.30
1.55
10.20
1.70
K/W
K/W
K/W
K/W
d
S
d
A
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
+
~
~
~
-
+
-
~
~
~
Dimensions in mm (1 mm = 0.0394“)
