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FMMV105GTA

P1-P1
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 – JANUARY 1998
PIN CONFIGURATION
PARTMARKING DETAILS
FMMV105G – 4EZ
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V
BR
30 V
I
R
= 10µA
Reverse current I
R
10 nA V
R
= 28V
Series Inductance L
S
3.0 nH f=250MHz
Diode Capacitance
Temperature
Coefficient
T
CC
280 ppm/ °C V
R
= 3V, f=1MHz
TUNING CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Diode Capacitance C
d
1.8 2.8 pF V
R
= 25V, f=1MHz
Capacitance Ratio C
d
/ C
d
4.0 6.0 V
R
= 3V/25V, f=1MHz
Figure of MERIT Q 250 350 V
R
= 3V, f=50MHz
Spice parameter data is available upon request for this device
FMMV105G
1
3
2
SOT23
1
3
P1-P1

FMMV105GTA

Mfr. #:
Buy FMMV105GTA
Manufacturer:
Diodes Incorporated
Description:
Varactor Diodes
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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