>10 W, 0.01 GHz to 2.8 GHz,
GaN Power Amplifier
Data Sheet
Rev. 0 Document Feedback
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FEATURES
High small signal gain: 16.0 dB
High PAE: 55% typical
Instantaneous bandwidth: 0.01 GHz to 2.8 GHz
Supply voltage: V
DD
= 28 V at 100 mA
Internal prematching
Simple and compact external tuning for optimal
performance
32-lead, 5 mm × 5 mm, LFCSP package
APPLICATIONS
Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructures
Test and measurement equipment
Commercial and military radars
General-purpose transmitter amplification
FUNCTIONAL BLOCK DIAGRAM
F
igure 1.
GENERAL DESCRIPTION
The HMC8500 is a gallium nitride (GaN), broadband power
amplifier delivering >10 W with up to 55% power added
efficiency (PAE) across an instantaneous bandwidth of 0.01
GHz to 2.8 GHz, and with a ±1.0 dB typical gain flatness.
The HMC8500 is ideal for pulsed or continuous wave (CW)
applications, such as wireless infrastructure, radars, public
mobile radios, and general-purpose amplification.
The HMC8500 amplifier is externally tuned using low cost,
surface-mount components and is available in a compact
LFCSP package.
Note that throughout this data sheet, multifunction pins, such
as RFIN/V
GG
, are referred to either by the entire pin name or by
a single function of the pin, for example, RFIN, when only that
function is relevant.
17
1
3
4
2
9
GND
NIC
NIC
RFIN/V
GG
5
6
RFIN/V
GG
NIC
7
NIC
8
GND
GND
18
NIC
19
NIC
20
RFOUT/V
DD
21
RFOUT/V
DD
22
NIC
23
NIC
24
GND
GND
12
NIC
11
NIC
10
NIC
13
NIC
14
NIC
15
NIC
16
GND
25
GND
26
NIC
27
NIC
28
NIC
29
NIC
30
NIC
31
NIC
32
GND
HMC8500
PACKAGE
BASE
14694-001
