Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CE
–25 Vdc
Collector–Base Voltage V
CB
–25 Vdc
Emitter–Base Voltage V
EB
–4.0 Vdc
Collector Current — Continuous I
C
–200 mAdc
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
JA
200 °C/W
Thermal Resistance, Junction to Case R
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –1.0 mA, I
B
= 0)
V
(BR)CEO
–25 —
Vdc
Collector–Base Breakdown Voltage
(I
C
= –10 A, I
E
= 0)
V
(BR)CBO
–25 —
Vdc
Emitter–Base Breakdown Voltage
(I
C
= 0, I
E
= –10 A)
V
(BR)EBO
–4.0 —
Vdc
Collector Cutoff Current
(V
CB
= –20 V, I
E
= 0)
I
CBO
— –50
nAdc
Emitter Cutoff Current
(V
EB
= –3.0 V, I
C
= 0)
I
EBO
— –50
nAdc
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
1 Publication Order Number:
MPS4126/D
MPS4126
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
