FJPF5200RTU Datasheet FJPF5200RTU, FJPF5200OTU | P1-P3

FJPF5200 — NPN Epitaxial Silicon Transistor

FJPF5200 Rev. C 1

January 2009

FJPF5200

NPN Epitaxial Silicon Transistor

Applications

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

Features

• High Current Capability: I

C

= 17A.

• High Power Dissipation : 50watts.

• High Frequency : 30MHz.

• High Voltage : V

CEO

=250V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to FJPF1943

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

-- TO264 package, 2SC5200/FJL4315 : 150 watts

-- TO3P package, 2SC5242/FJA4313 : 130 watts

-- TO220 package, FJP5200 : 80 watts

Absolute Maximum Ratings* T

a

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* T

a

=25°C unless otherwise noted

* Device mounted on minimum pad size

h

FE

Classification

Symbol Parameter Ratings Units

BV

CBO

Collector-Base Voltage 250 V

BV

CEO

Collector-Emitter Voltage 250 V

BV

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current(DC) 17 A

I

B

Base Current 1.5 A

P

D

Total Device Dissipation(T

C

=25°C)

Derate above 25°C

50

0.4

W

W/°C

T

J

, T

STG

Junction and Storage Temperature - 50 ~ +150 °C

Symbol Parameter Max. Units

R

θJC

Thermal Resistance, Junction to Case 2.5 °C/W

Classification R O

h

FE1

55 ~ 110 80 ~ 160

1

1.Base 2.Collector 3.Emitter

TO-220F

FJPF5200 — NPN Epitaxial Silicon Transistor

FJPF5200 Rev. C 2

Electrical Characteristics* T

a

=25°C unless otherwise noted

* Pulse Test: Pulse Widt=20µs, Duty Cycle≤2%

Ordering Information

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=5mA, I

E

=0 250 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=10mA, R

BE

=∞ 250 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=5mA, I

C

=0 5 V

I

CBO

Collector Cut-off Current V

CB

=230V, I

E

=0 5.0 µA

I

EBO

Emitter Cut-off Current V

EB

=5V, I

C

=0 5.0 µA

h

FE1

DC Current Gain V

CE

=5V, I

C

=1A 55 160

h

FE2

DC Current Gain V

CE

=5V, I

C

=7A 35 60

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=8A, I

B

=0.8A 0.4 3.0 V

V

BE

(on) Base-Emitter On Voltage V

CE

=5V, I

C

=7A 1.0 1.5 V

f

T

Current Gain Bandwidth Product V

CE

=5V, I

C

=1A 30 MHz

C

ob

Output Capacitance V

CB

=10V, f=1MHz 200 pF

Part Number Marking Package Packing Method Remarks

FJPF5200RTU J5200R TO-220F TUBE hFE1 R grade

FJPF5200OTU J5200O TO-220F TUBE hFE1 O grade

FJPF5200 — NPN Epitaxial Silicon Transistor

FJPF5200 Rev. C 3

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain ( R grade )

Figure 3. DC current Gain ( O grade ) Figure 4. Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage

0 2 4 6 8 10 12 14 16 18 20

0

2

4

6

8

10

12

14

16

I

B

= 0

I

B

=200mA

I

B

= 120mA

I

B

= 140mA

I

B

= 160mA

I

B

= 180mA

I

B

= 100mA

I

B

= 60mA

I

B

= 80mA

I

B

= 40mA

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

110

1

10

100

Vce=5V

Tj=-25

o

C

Tj=25

o

C

Tj=125

o

C

h

FE

, DC CURRENT GAIN

Ic[A], COLLECTOR CURRENT

110

1

10

100

Vce=5V

Tj=-25

o

C

Tj=25

o

C

Tj=125

o

C

h

FE

, DC CURRENT GAIN

Ic[A], COLLECTOR CURRENT

0.1 1 10

1

10

100

1000

10000

Ic=10Ib

Tj=-25

o

C

Tj=25

o

C

Tj=125

o

C

Vce(sat)[mV], SATURATION VOLTAGE

Ic[A], COLLECTOR CURRENT

0.1 1 10

100

1000

10000

Ic=10Ib

Tj=-25

o

C

Tj=25

o

C

Tj=125

o

C

Vbe(sat)[mV], SATURATION VOLTAGE

Ic[A], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

0

2

4

6

8

10

12

V

CE

= 5V

I

C

[A], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

FJPF5200RTU

FJPF5200RTU

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