MOS FET
SKP253 December 2005
.
Sanken Electric Co.,Ltd.
T02-004EA-051124
Electrical characteristics
(Ta=25°C)
Limits
Characteristic Symbol Test Conditions
MIN. TYP. MAX.
Unit
Drain to Source breakdown Voltage
V(BR)DSS ID=100μA,VGS=0V 250 V
Gate to Source Leakage Current
IGSS VGS=±30V ±100 nA
Drain to Source Leakage Current
I
DSS VDS=250V, VGS=0V 100 μA
Gate Threshold Voltage
VTH VDS=10V, ID=1mA 3.0 4.5 V
Forward Transconductance
Re(Yfs) VDS=10V, ID=10A 8 17 S
Static Drain to Source On-Resistance
R
DS(on) ID=10A, VGS=10V 86 95 mΩ
Input Capacitance
Ciss 1600
Output Capacitance
Coss 280
Reverse Transfer Capacitance
Crss
V
DS=25V
V
GS=0V
f=1MHz
50
pF
Turn-On Delay Time
td(on)
30
Rise Time
tr
60
Turn-Off Delay Time
td(off)
80
Fall Time
tf
I
D=10A, VDD≈120V
R
L=12Ω, VGS=10V
R
G=5Ω
See Fig.2
45
ns
Source-Drain Diode Forward Voltage
VSD ISD=20A,VGS=0V 1.0 1.5 V
