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DB2S20900L

P1-P3P4-P5
Product Standards
Schottky Barrier Diode
DB2S20900L
Absolute Maximum Ratings Ta = 25 °C
Note: *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Page
°C
y
IF(AV)
1
125
Operating ambient temperature Topr -40 to +85
Packaging
Reverse voltage VR
3 000 pcs / reel (standard)
Parameter Symbol
20
Embossed type (Thermo-compression sealing) :
Panasonic
V
Rating Unit
Code
DB2S20900L
Silicon epitaxial planar type
For high frequency rectifier
DB2J209 in SSMini2 type package
Features
SOD-523
y
y
Low forward voltage VF
Halogen-free / RoHS compliant
Short reverse recovery time trr
1. Cathode
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
SSMini2-F5-B
JEITA SC-79
2. Anode
Marking Symbol:
BE
1
Unit: mm
Internal Connection
4
mA
IFSM A
-55 to +125
of
Tj °C
Non-repetitive peak forward surge current
*1
°CStorage temperature Tstg
Repetitive peak reverse voltage VRRM 20 V
Junction temperature
500Forward current (Average)
1
2
1.6
0.8
0.6
1.2
0.13
1
2
0.3
Doc No.
TT4-EA-13118
Revision.
2
Established
:
2011-03-10
Revised
:
2013-12-12
Product Standards
Schottky Barrier Diode
DB2S20900L
Electrical Characteristics Ta = 25 °C ± 3 °C
Forward voltage
Reverse current
Terminal capacitance
Reverse recover
y
time
*1
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031
measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the
charge of a human body and the leakage of current from the operating equipment.
3. Absolute frequency of lnput and output is 400 MHz
4. *1 ： trr measurement circuit
Page
V
0.51
V
µA
Parameter Symbol Conditions
4
Min Typ
2of
UnitMax
VR = 10 V 30
IF = 500 mA
0.3
IR
Ct
VR = 10 V, f = 1 MHz
VF1
IF = 10 mA
VF2
trr
IF = IR = 100 mA,
2.4 ns
Irr = 0.1 × IR, RL = 100
Ω
7pF
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
I
rr
= 0.1 × I
R
Doc No.
TT4-EA-13118
Revision.
2
Established
:
2011-03-10
Revised
:
2013-12-12
Product Standards
Schottky Barrier Diode
DB2S20900L
Technical Data ( reference )
Page 3 of 4
IF - VF
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
Forward current IF (A)
Ta = 125 ℃
25 ℃
-40 ℃
85 ℃
100 ℃
IR - VR
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0 5 10 15 20
Reverse voltage VR (V)
Reverse current IR (A)
Ta = 125 ℃
85 ℃
25 ℃
100 ℃
-40 ℃
Ct - VR
0
10
20
30
40
0 5 10 15 20
Reverse voltage VR (V)
Terminal capacitance Ct (pF)
Ta = 25 ℃
f = 1 MHz
Doc No.
TT4-EA-13118
Revision.
2
Established
:
2011-03-10
Revised
:
2013-12-12
P1-P3P4-P5

DB2S20900L

Mfr. #:
Buy DB2S20900L
Manufacturer:
Panasonic
Description:
Schottky Diodes & Rectifiers Schottky Diode SC-79/SOD-523
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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