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2STBN15D100T4

P1-P3P4-P6P7-P7
January 2010 Doc ID 16117 Rev 2 1/7
7
2STBN15D100
Low voltage NPN power Darlington transistor
Features
■ Good h
FE
linearity
■ High f
T
frequency
■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
Description
The device is manufactured in planar technology
with “base island” layout and monolithic
Darlington configuration.
Figure 1. Internal schematic diagrams
1
3
D²PAK
TA B
R
1
= 8 kΩ
R
2
= 150 Ω
Table 1. Device summary
Order code Marking Package Packaging
2STBN15D100T4 BN15D100 D²PAK Tape and reel
www.st.com
Electrical ratings 2STBN15D100
2/7 Doc ID 16117 Rev 2
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 100 V
V
CEO
Collector-emitter voltage (I
B
= 0) 100 V
V
EBO
Emitter-base voltage (I
C
= 0) 5 V
I
C
Collector current 12 A
I
CM
Collector peak current 15 A
I
B
Base current 0.2 A
P
TOT
Total dissipation at T
case
= 25 °C 70 W
T
STG
Storage temperature -65 to 150 °C
T
J
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case max. 1.8 °C/W
2STBN15D100 Electrical characteristics
Doc ID 16117 Rev 2 3/7
2 Electrical characteristics
T
case
= 25 °C; unless otherwise specified.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off current
(I
E
= 0)
V
CB
= 100 V - 100 µA
I
CEO
Collector cut-off current
(I
B
= 0)
V
CE
= 50 V - 100 µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V 0.12 - 2 mA
V
CEO(sus)
(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage (I
B
= 0)
I
C
= 100 mA 100 - V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 0.5 A I
B
= 1 mA
I
C
= 4 A _ I
B
= 4 mA
-
1.5
1.3
V
V
V
BE(on)
(1)
Base-emitter on voltage I
C
= 3 A _ V
CE
= 3 V - 2.5 V
h
FE
(1)
DC current gain I
C
= 3 A V
CE
= 3 V 750 -
V
F
Diode forward voltage I
F
= 3 A - 2.5 V
P1-P3P4-P6P7-P7

2STBN15D100T4

Mfr. #:
Buy 2STBN15D100T4
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT Low Voltage NPN 750 hFE 100V Vceo
Lifecycle:
New from this manufacturer.
Delivery:
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