SFS1001GHMNG

SFS1001G - SFS1008G
CREAT BY ART
- Low forward voltage drop
- Ideal for automated placement
- High current capability
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 420 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
t
rr
ns
C
J
pF
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D1405076 Version: H15
T
J
=125°C
Storage temperature range - 55 to +150
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
SFS
1001
G
SFS
1002
G
SFS
1003
G
SFS
1004
G
SFS
1005
G
SFS
1006
G
Maximum reverse recovery time (Note 2) 35
Typical thermal resistance 2
Operating junction temperature range - 55 to +150
Typical junction capacitance (Note 3) 70 50
I
R
1
μA
200
V
Maximum instantaneous forward voltage (Note 1)
I
F
= 5 A
V
F
Maximum reverse current @ rated V
R
T
J
=25°C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
125 A
0.975 1.3
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 10
SFS
1007
G
SFS
1008
G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
1.7
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
TO-263AB (D
2
PAK)
Case: TO-263AB (D
2
PAK)
Polarity: As marked
Weight: 1.37 g (approximately)
Taiwan Semiconductor
10A, 50V - 600V Surface Mount Su
p
er Fast Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
PART NO.
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Document Number: DS_D1405076 Version: H15
HRN G
AEC-Q101 qualified
Green compound
SFS1008GHRNG SFS1008G
RATINGS AND CHARACTERISTICS CURVES
Note 1: "x" defines voltage from 50V (SFS1001G) to 600V (SFS1008G)
EXAMPLE
PREFERRED P/N
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
SFS100xG
(Note 1)
H
RN
G
800 / 13" Paper reel
MN 800 / 13" Plastic reel
D
2
PAK
SFS1001G - SFS1008G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
(*)
PACKAGE PACKING
0
2
4
6
8
10
12
0 25 50 75 100 125 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (
o
C)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
0
30
60
90
120
150
1 10 100
PEAK FORWARD SURGE CURRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT
(μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
T
J
=100°C
T
J
=25°C
T
J
=75°C
0.1
1
10
100
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
SFS1007G-SFS1008G
Pulse Width=300μs
1% Duty Cycle
SFS1005G-SFS1006G
SFS1001G-SFS1004G
Min Max Min Max
A
-
10.5 - 0.413
B 14.60 15.88 0.575 0.625
C 2.41 2.67 0.095 0.105
D 0.68 0.94 0.027 0.037
E 2.29 2.79 0.090 0.110
F 4.44 4.70 0.175 0.185
G 1.14 1.40 0.045 0.055
H 1.14 1.40 0.045 0.055
I 8.25 9.25 0.325 0.364
J 0.36 0.53 0.014 0.021
K 2.03 2.79 0.080 0.110
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1405076 Version: H15
MARKING DIAGRAM
F 9.5 0.374
G 2.5 0.098
D 3.5 0.138
E 16.9 0.665
B 8.3 0.327
C 1.1 0.043
SUGGESTED PAD LAYOUT
Symbol Unit (mm) Unit (inch)
A 10.8 0.425
SFS1001G - SFS1008G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
TO-263AB (D
2
PAK)
40
50
60
70
80
90
100
1 10 100
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
SFS1005G-SFS1008G
SFS1001G-SFS1004G
f=1.0MHz
Vsig=50mVp-p

SFS1001GHMNG

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
DIODE GEN PURP 50V 10A TO263AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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