NTLUS3A90PZCTBG

NTLUS3A90PZC
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V)
161412106420
0
400
800
1200
1600
2000
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
1
100
1000
1.21.00.80.60.40.2
1
100
Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power
Dissipation
T
J
, JUNCTION TEMPERATURE (°C) SINGLE PULSE TIME (s)
12510075502502550
0.15
0.35
0.65
0.85
1.E031.E05
0
50
75
125
150
175
200
225
C, CAPACITANCE (pF)t, TIME (ns)
I
S
, SOURCE CURRENT (A)
V
GS(th)
(V)
POWER (W)
82018
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
iss
C
oss
C
rss
V
GS
= 4.5 V
V
DD
= 15 V
I
D
= 3.0 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
I
D
= 250 mA
0.45
0.55
0.75
150
100
25
1.E01 1.E+01 1.E+03
10
0.25
Q
G
, TOTAL GATE CHARGE (nC)
12106420
0
1
2
3
4
5
V
GS
, GATETOSOURCE VOLTAGE (V)
814
V
DS
= 10 V
I
D
= 3.0 A
T
J
= 25°C
Q
T
V
DS
V
GS
Q
GS
Q
GD
0
2
4
6
8
10
12
V
DS
, DRAINTOSOURCE VOLTAGE (V)
10
NTLUS3A90PZC
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
1001010.1
0.01
0.1
1
10
100
Figure 14. FET Thermal Response
I
D
, DRAIN CURRENT (A)
V
GS
= 8 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
10 ms
100 ms
1 ms
10 ms
dc
t, TIME (s)
1E021E031E041E051E06
0
10
20
40
50
60
70
90
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
30
80
1E01 1E+00 1E+01 1E+02 1E+03
R
q
JA
= 84°C/W
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
DEVICE ORDERING INFORMATION
Device Package Shipping
NTLUS3A90PZCTAG UDFN6
(PbFree)
3000 / Tape & Reel
NTLUS3A90PZCTBG UDFN6
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTLUS3A90PZC
http://onsemi.com
6
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AU
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
B
E
D
D2
E2
BOTTOM VIEW
b
e
6X
0.10 B
0.05
AC
C
NOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X
0.10 C
NOTE 4
A
A1
(A3)
0.05 C
0.05 C
C
SEATING
PLANE
SIDE VIEW
L
6X
1
3
46
DIM MIN MAX
MILLIMETERS
A 0.45 0.55
A1 0.00 0.05
A3 0.13 REF
b 0.20 0.30
D 1.60 BSC
D2 0.15 0.25
E 1.60 BSC
E2 0.57 0.67
e 0.50 BSC
L 0.20 0.30
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
MOUNTING FOOTPRINT*
L1
DETAIL A
A1
A3
DETAIL B
OPTIONAL
MOLD CMPD
EXPOSED Cu
L
CONSTRUCTION
OPTIONAL
CONSTRUCTION
DETAIL B
DETAIL A
0.82
0.43
0.50 PITCH
0.35
2X
1.90
DIMENSIONS: MILLIMETERS
0.32
1
6X
SOLDERMASK DEFINED
L1 −−− 0.15
F 0.55 BSC
G 0.25 BSC
D1 0.62 0.72
D1
G
F
0.10 B
AC
0.10 BAC
0.16
0.28
0.68
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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NTLUS3A90PZC/D
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
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NTLUS3A90PZCTBG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET UDFN6 20V 4A 62
Lifecycle:
New from this manufacturer.
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