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FERD40H100SG-TR

P1-P3P4-P6P7-P9P10-P12
April 2016
DocID029155 Rev 1
1/12
This is information on a product in full production.
www.st.com
FERD40H100S
100 V field-effect rectifier diode
Datasheet - production data
Features
ST advanced rectifier process
Stable leakage current over reverse voltage
Reduced leakage current
Low forward voltage drop
High frequency operation
Description
The device is based on a proprietary technology
that achieves the best in class V
F
/I
R
trade-off for a
given silicon surface. This 100 V rectifier has
been optimized for use in confined applications
where both efficiency and thermal performance
are key. With a lower dependency of leakage
current (I
R
) and forward voltage (V
F
) in function of
temperature, the thermal runaway risk is reduced.
It is highly recommended to be used in adapters
and chargers.
Table 1: Device summary
Symbol
I
F(AV)
40 A
V
RRM
100 V
V
F
(max.)
0.375 V
I
R
(max.)
190 µA
T
j
(max.)
175 °C
TO-220AB
A
K
A
K
K
A
K
NC
A
D²PAK
A
Characteristics
FERD40H100S
2/12
DocID029155 Rev 1
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified, with anode
terminals short circuited)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
100
V
I
F(RMS)
Forward rms current
60
A
I
F(AV)
Average forward current δ = 0.5, square wave
T
C
= 145 °C
40
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms
sinusoidal
440
A
T
stg
Storage temperature range
-65 to +175
°C
T
j
Maximum operating junction temperature
(1)
+175
°C
Notes:
(1)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal resistance parameters
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
0.8
°C/W
Table 4: Static electrical characteristics with anode terminals short circuited
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
190
µA
T
j
= 125 °C
-
12
24
mA
T
j
= 125 °C
V
R
= 70 V
-
6
12
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 4 A
-
0.380
0.430
V
T
j
= 125 °C
-
0.325
0.375
T
j
= 25 °C
I
F
= 10 A
-
0.465
0.525
T
j
= 125 °C
-
0.455
0.510
T
j
= 25 °C
I
F
= 20 A
-
0.600
0.675
T
j
= 125 °C
-
0.550
0.600
T
j
= 125 °C
I
F
= 40 A
-
0.645
0.705
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.420 x I
F(AV)
+ 0.009 I
F
2
(RMS)
FERD40H100S
Characteristics
DocID029155 Rev 1
3/12
1.1 Characteristics (curves)
Figure 1: Average forward current versus ambient
temperature (δ = 0.5)
Figure 2: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 3: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 4: Junction capacitance versus reverse
voltage applied (typical values)
Figure 5: Forward voltage drop versus forward
current (typical values)
Figure 6: Forward voltage drop versus forward
current (typical values)
0
10
20
30
40
50
0 25 50 75 100 125 150 175
T
amb
(°C)
T
= tp/T
tp
δ
I
F(AV)
(A)
R
th(j-a)
= R
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01
Single pulse
Z
th(j-c)
/R
th(j-c)
t
p
(s)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 10 20 30 40 50 60 70 80 90 100
I
R
(mA)
V
R
(V)
T
j
= 150 °C
T
j
= 100 °C
T
j
= 125 °C
T
j
= 75 °C
T
j
= 25 °C
T
j
= 50 °C
100
1000
10000
1 10 100
C(pF)
V
R
(V)
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
0.1
1.0
10.0
100.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I
F
(A)
V
F
(V)
T
j
= 75 °C
T
j
= 25 °C
T
j
= 125 °C
0
10
20
30
40
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I
F
(A)
V
F
(V)
T
j
= 125 °C
T
j
= 25 °C
T
j
= 75 °C
P1-P3P4-P6P7-P9P10-P12

FERD40H100SG-TR

Mfr. #:
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Manufacturer:
STMicroelectronics
Description:
Rectifiers RECTIFIER
Lifecycle:
New from this manufacturer.
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