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NUS2401SNT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
Publication Order Number:
NUS2401SNT1/D
NUS2401SNT1
Integrated PNP/NPN Digital
Transistors Array
This new option of integrated digital transistors is designed to
replace a discrete solution array of three transistors and their external
resistor bias network. BRTs (Bias Resistor Transistors) contain a
single transistor with a monolithic bias network consisting of two
resistors; a series base resistor and a base−emitter resistor. The BRT
technology eliminates these individual components by integrating
them into a single device, therefore the integration of three BRTs
results in a significant reduction of both system cost and board space.
This new device is packaged in the SC−74/Case 318F package which
is designed for low power surface mount applications.
Features
• Integrated Design
• Reduces Board Space and Components Count
• Simplifies Circuitry Design
• Offered in Surface Mount Package Technology (SC−74)
• Available in 3000 Unit Tape and Reel
• Pb−Free Package is Available
Applications
• Audio Muting Applications
• Drive Circuits Applications
• Industrial: Small Appliances, Security Systems, Automated Test
• Consumer: TVs and VCRs, Stereo Receivers, CD Players,
Cassette Recorders
MAXIMUM RATINGS (Maximum ratings are those values beyond which
device damage can occur. Electrical Characteristics are not guaranteed over
this range.)
Rating
Symbol Value Unit
Collector−Base Voltage V
(BR)CBO
60 Vdc
Collector−Emitter Voltage V
(BR)CEO
50 Vdc
Emitter−Base Voltage V
(BR)EBO
7.0 Vdc
Collector Current − Continuous I
C
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation P
D
350 mW
Junction Temperature T
J
150 °C
Storage Temperature T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SC−74
CASE 318F
STYLE 4
MARKING
DIAGRAM
1
50 M G
G
Device Package Shipping
†
ORDERING INFORMATION
NUS2401SNT1 SC−74 3000/Tape & Reel
(4)(5)
(6)
(1) (2) (3)
6
http://onsemi.com
Q3
Q1 Q2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NUS2401SNT1G SC−74
(Pb−Free)
3000/Tape & Reel
50 = Specific Device Code
M
= Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NUS2401SNT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted: T
J
= 25°C for typical values, common for Q1, Q2, and Q3, − minus signed for Q3 (PNP) omitted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
− − 100 nAdc
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0) I
CEO
− − 500 nAdc
Emitter−Base Cutoff Current (V
CE
= 6.0 V, I
C
= 0) Q3
Q1, Q2
I
EBO
−
−
−
−
500
0.1
mA
Collector−Base Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − − V
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − − V
ON CHARACTERISTICS (Note 1)
DC Current Gain Q3
Q1, Q2
h
FE
35
150
60
350
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA) Q3
(I
C
= 10 mA, I
B
= 1.0 mA) Q1, Q2
V
CE(sat)
−
−
−
−
0.25
0.25
Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2 V
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
V
OH
4.9 − − V
Input Resistor Q3
Q1, Q2
R1 7.0
0.13
10
0.175
13
0.22
kW
Resistor Ratio Q3
Q1, Q2
R1/R2 −
−
1.0
∞
−
−
1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%.
NUS2401SNT1
http://onsemi.com
3
Figure 1. Derating Curve
400
300
200
100
50
0
−50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
R
q
JA
= 357°C/W
P
D
, POWER DISSIPATION (mW)
350
250
150
Figure 2. Maximum Collector Voltage versus
Collector Current
1
0.1
0.01
010 3040
I
C
, COLLECTOR CURRENT (mA)
I
C
/I
B
= 10
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (V)
20 50 70 8060
T
A
= −25°C
75°C
25°C
Figure 3. DC Current Gain
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
Figure 4. Output Capacitance
6
1
010 3040
I
C
, COLLECTOR CURRENT (mA)
C
ob
, CAPACITANCE (pF)
20 50 60
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
T
A
= −25°C
75°C
25°C
0
3
2
5
4
Figure 5. Output Current versus Input Voltage
100
10
1
0 0.1
V
in
, INPUT VOLTAGE (V)
V
O
= 5 V
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
10
010 3040
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT VOLTAGE (V)
20 50 60
T
A
= 75°C
−25°C
0.1
1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
25°C
V
O
= 0.2 V
T
A
= 75°C
−25°C
25°C
P1-P3P4-P5

NUS2401SNT1G

Mfr. #:
Buy NUS2401SNT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 200mA 50V Integrated NPN/PNP
Lifecycle:
New from this manufacturer.
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