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P2N2907A

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
1 Publication Order Number:
P2N2907A/D
P2N2907A
Amplifier Transistor
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−60 Vdc
Collector−Base Voltage V
CBO
−60 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−92
(T0−226AA)
CASE 29−11
STYLE 17
MARKING
DIAGRAM
http://onsemi.com
(Note: Microdot may be in either location)
1
2
3
P2N2
907A
AYWW G
G
P2N2 = Device Code
907A = Specific Device
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
P2N2907ARL1 TO−92
5000 Units / Bulk
P2N2907ARL1G TO−92
(Pb−Free)
5000 Units / Bulk
Device Package Shipping
†
P2N2907A TO−92
2000 / Tape & Ammo
P2N2907AG TO−92
(Pb−Free)
2000 / Tape & Ammo
ORDERING INFORMATION
COLLECTOR
1
2
BASE
3
EMITTER
P2N2907AZL1 TO−92
P2N2907AZL1G TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2000 / Tape & Reel
P2N2907A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= −10 mAdc, I
B
= 0)
V
(BR)CEO
−60 − Vdc
Collector−Base Breakdown Voltage
(I
C
= −10 mAdc, I
E
= 0)
V
(BR)CBO
−60 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 − Vdc
Collector Cutoff Current
(V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc)
I
CEX
− −50 nAdc
Collector Cutoff Current
(V
CB
= −50 Vdc, I
E
= 0)
(V
CB
= −50 Vdc, I
E
= 0, T
A
= 150°C)
I
CBO
−
−
−0.01
−10
mAdc
Emitter Cutoff Current
(V
EB
= −3.0 Vdc)
I
EBO
− −10 nAdc
Collector Cutoff Current
(V
CE
= −10 V)
I
CEO
− −10 nAdc
Base Cutoff Current
(V
CE
= −30 Vdc, V
EB(off)
= −0.5 Vdc)
I
BEX
− −50 nAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −10 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
(I
C
= −150 mAdc, V
CE
= −10 Vdc) (Note 1)
(I
C
= −500 mAdc, V
CE
= −10 Vdc) (Note 1)
h
FE
75
100
100
100
50
−
−
−
300
−
−
Collector−Emitter Saturation Voltage (Note 1)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
CE(sat)
−
−
−0.4
−1.6
Vdc
Base−Emitter Saturation Voltage (Note 1)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
BE(sat)
−
−
−1.3
−2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Notes 1 and 2)
(I
C
= −50 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
200 − MHz
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 8.0 pF
Input Capacitance
(V
EB
= −2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 30 pF
SWITCHING CHARACTERISTICS
Turn−On Time
(V
CC
= −30 Vdc, I
C
= −150 mAdc,
I
B1
= −15 mAdc) (Figures 1 and 5)
t
on
− 50 ns
Delay Time t
d
− 10 ns
Rise Time t
r
− 40 ns
Turn−Off Time
(V
CC
= −6.0 Vdc, I
C
= −150 mAdc,
I
B1
= I
B2
= −15 mAdc) (Figure 2)
t
off
− 110 ns
Storage Time t
s
− 80 ns
Fall Time t
f
− 30 ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
P2N2907A
http://onsemi.com
3
0
0
−16 V
200 ns
50
1.0 k
200
−30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V −6.0 V
1.0 k 37
50
1N916
1.0 k
200 ns
−30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Z
o
= 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
P1-P3P4-P6

P2N2907A

Mfr. #:
Buy P2N2907A
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 60V 0.6A TO-92
Lifecycle:
New from this manufacturer.
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