FFP04U40DNTU

©2000 Fairchild Semiconductor International

FFP04U40DN

Rev. F, September 2000

ULTRA FAST RECOVERY POWER RECTIFIER

Absolute Maximum Ratings (per diode) T

C

=25°

°°

°C unless otherwise noted

Thermal Characteristics

Electrical Characteristics

(per diode) T

C

=25 °

°°

°C unless otherwise noted

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Symbol Parameter Value Units

V

RRM

Peak Repetitive Reverse Voltage 400 V

I

F(AV)

Average Rectified Forward Current @ T

C

= 100°C4 A

I

FSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

40 A

T

J,

T

STG

Operating Junction and Storage Temperature - 65 to +150 °C

Symbol Parameter Value Units

R

θJC

Maximum Thermal Resistance, Junction to Case 10 °C/W

Symbol Parameter Min. Typ. Max. Units

V

FM

*

Maximum Instantaneous Forward Voltage

I

F

= 4A

I

F

= 4A

T

C

= 25 °C

T

C

= 100 °C

-

-

-

-

1.4

1.3

V

I

RM

*

Maximum Instantaneous Reverse Current

@ rated V

R

T

C

= 25 °C

T

C

= 100 °C

-

-

-

-

10

100

µA

t

rr

I

rr

Q

rr

Maximum Reverse Recovery Time

Maximum Reverse Recovery Current

Maximum Reverse Recovery Charge

(I

F

=4A, di/dt = 200A/µs)

-

-

-

-

-

-

45

3.0

68

ns

A

nC

W

AVL

Avalanche Energy 1.0 - - mJ

FFP04U40DN

Features

• Ultrafast with soft recovery

• Low forward voltage

Applications

• Power switching circuits

• Output rectifiers

• Freewheeling diodes

• Switching mode power supply

TO-220

1 2 3

1. Anode 2.Cathode 3. Anode

©2000 Fairchild Semiconductor International Rev. F, September 2000

FFP04U40DN

Typical CharacteristicsTypical CharacteristicsTypical CharacteristicsTypical Characteristics

Figure 1. Typical Forward Voltage Drop

vs. Forward Current

Figure 3. Typical Junction Capacitance

Figure 5. Typical Reverse Recovery Current

vs. di/dt

Figure 2. Typical Reverse Current

vs. Reverse Voltage

Figure 4. Typical Reverse Recovery Time

vs. di/dt

Figure 6. Forward Current Derating Curve

0.1

1

10

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0

T

C

= 25

o

C

T

C

= 100

o

C

Forward Voltage , V

F

[V]

Forward Current , I

F

[A]

0.1 1 10 100

50

100

150

200

Typical Capacitance

at 0V = 138 pF

Capacitance , Cj [pF]

Reverse Voltage , V

R

[V]

100 500

0

1

2

3

4

5

6

I

F

= 4A

T

C

= 25

o

C

Reverse Recovery Current , I

rr

[A]

di/dt [A/

µ

s]

50 100 150 200 250 300 350 400

0.001

0.01

0.1

1

10

100

1000

T

C

= 100

o

C

T

C

= 25

o

C

Reverse Current , I

R

[

µ

A]

Reverse Voltage , V

R

[V]

100 500

20

25

30

35

40

45

50

I

F

= 4A

T

C

= 25

o

C

Reverse Recovery Time , t

rr

[ns]

di/dt [A/

µ

s]

60 80 100 120 140 160

0

1

2

3

4

5

6

DC

Average Forward Current , I

F(AV)

[A]

Case Temperature , T

C

[

o

C]

©2000 Fairchild Semiconductor International

Rev. F, September 2000

FFP04U40DN

Package Dimensions

Dimensions in Millimeters

4.50

±0.20

9.90

±0.20

1.52

±0.10

0.80

±0.10

2.40

±0.20

10.00

±0.20

1.27

±0.10

ø3.60

±0.10

(8.70)

2.80

±0.10

15.90

±0.20

10.08

±0.30

18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20

±0.20

13.08

±0.20

1.30

±0.10

1.30

+0.10

–0.05

0.50

+0.10

–0.05

2.54TYP

[2.54

±0.20

]

2.54TYP

[2.54

±0.20

]

TO-220

FFP04U40DNTU

Mfr. #:

Buy FFP04U40DNTU

Manufacturer:

ON Semiconductor

Description:

DIODE ARRAY GP 400V 4A TO220AB

Lifecycle:

New from this manufacturer.

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FFP04U40DNTU