IXZR08N120 & IXZR08N120A/B
Z-MOS RF Power MOSFET
Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V
8
Α
I
SM
Repetitive; pulse width limited by T
JM
48 A
V
SD
I
F=
I
s,
V
GS
=0 V, Pulse test, t ≤ 300µs, duty cycle
≤2%
1.5 V
T
rr
200 ns
Source-Drain Diode
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585
6,731,002
Symbol Test Conditions Characteristic Values
(
T
J
= 25°C unless otherwise specified
)
min. typ. max.
R
G
0.3
Ω
C
iss
1900 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz
86 pF
C
rss
11 pF
T
d(on)
4 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2 Ω (External)
5 ns
T
d(off)
4 ns
T
off
6 ns
Q
g(on)
39 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
I
G
= 3mA
11 nC
Q
gd
19 nC
C
stray
Back Metal to any Pin
33 pF
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
